NE960R5 Renesas Electronics Corporation., NE960R5 Datasheet - Page 2

• Manufacturer Part Number: NE960R5
• Description: 0.5 W X, Ku-band Power Gaas Mes Fet
• Manufacturer: Renesas Electronics Corporation.

ABSOLUTE MAXIMUM RATINGS (T
RECOMMENDED OPERATING CONDITIONS
ELECTRICAL CHARACTERISTICS
(T
2
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Forward Current
Gate Reverse Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Drain to Source Voltage
Gain Compression
Channel Temperature
Saturated Drain Current
Pinch-off Voltage
Gate to Drain Break Down Voltage
Gate to Source Break Down
Voltage
Thermal Resistance
Output Power at P
Output Power at 1 dB Gain
Compression Point
Power Added Efficiency at P
Linear Gain
A
Operation in excess of any one of these parameters may result in permanent damage.
Notes 1. NE962R575
Notes 1. Except NE962R575
Remark DC and RF performance is 100 % testing.
= +25 C, unless otherwise specified, using NEC standard test fixture.)
Note 2
2. NE961R500
2. NE962R575 only
3. NE961R500
Note 1
Parameter
Parameter
Parameter
in
Note 1
= +19 dBm
o (1dB)
Note 1
Note 1
Symbol
Symbol
Symbol
Gcomp
P
V
BV
BV
V
V
I
P
o (1 dB)
T
I
T
T
R
I
P
DSS
V
G
GSO
I
GF
GR
DS
stg
DS
out
D
ch
ch
add
T
th
p
L
Preliminary Data Sheet P14387EJ1V0DS00
gd
gs
A
= +25 C)
V
V
I
I
Channel to Case
f = 14.5 GHz, V
R
I
gd
gs
Dset
DS
DS
g
= 2 mA
= 2 mA
= 1 k
= 1.5 V, V
= 2.5 V, I
= 180 mA (RF OFF)
Test Conditions
Test Condition
D
GS
= 2 mA
DS
= 0 V
= 9.0 V
5.0 (4.2
–65 to +175
–7 ( 9
Ratings
+5.0
–5.0
175
0.7
15
Note 1
Note 2
MIN.
MIN.
0.18
–2.5
25.5
9.0
8.0
15
)
)
TYP.
TYP.
–1.8
26.5
27.5
9.0
9.0
0.4
30
NE960R5 SERIES
30 (35
MAX.
MAX.
+130
–0.5
9.0
3.0
0.7
Note 3
)
°C/W
Unit
dBm
dBm
Unit
mA
mA
Unit
dB
dB
W
V
V
A
%
V
A
V
V
V
C
C
C