NESG210833 Renesas Electronics Corporation., NESG210833 Datasheet - Page 3

• Manufacturer Part Number: NESG210833
• Description: Npn Silicon Germanium Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

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TYPICAL CHARACTERISTICS (T
Remark The graphs indicate nominal characteristics.
0.0001
1 000
0.001
0.01
500
100
100
480
0.1
10
80
60
40
20
0
1
0.4
0
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0
0
1 000 A
TOTAL POWER DISSIPATION
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
vs. AMBIENT TEMPERATURE
V
μ
25
CE
Collector to Emitter Voltage V
0.5
Base to Emitter Voltage V
1
= 3 V
Ambient Temperature T
50
3.8 cm × 9.0 cm × 0.8mm (t),
FR–4
0.6
2
900 A
75
μ
0.7
3
800 A
100
A
A
μ
BE
(°C)
= +25°C, unless otherwise specified)
I
B
CE
(V)
0.8
125
= 100 A
4
(V)
600 A
700 A
200 A
400 A
300 A
500 A
Data Sheet PU10765EJ02V0DS
μ
μ
μ
μ
μ
μ
μ
150
0.9
5
0.0001
0.001
0.01
100
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
1
0.4
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
Collector to Base Voltage V
1
0.5
Base to Emitter Voltage V
= 5 V
2
0.6
3
0.7
NESG210833
4
BE
CB
f = 1 MHz
(V)
0.8
(V)
5
0.9
3