NESG204619 Renesas Electronics Corporation., NESG204619 Datasheet

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NESG204619

Manufacturer Part Number
NESG204619
Description
Necs Npn Sige Transistor For Low Noise, High-gain Amplification
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number:
NESG204619-T1-A
Manufacturer:
CEL
Quantity:
15 000
Document No. PU10465EJ01V0DS (1st edition)
Date Published January 2004 CP(K)
Printed in Japan
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
• High breakdown voltage technology for SiGe Tr. adopted: V
• 3-pin ultra super minimold package
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
NESG204619
NESG204619-T1
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Remark To order evaluation samples, contact your nearby sales office.
Note Mounted on 1.08 cm
NF = 0.8 dB TYP., G
Part Number
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Unit sample quantity is 50 pcs.
Parameter
a
50 pcs (Non reel)
3 kpcs/reel
= 11.0 dB TYP. @ V
LOW NOISE, HIGH-GAIN AMPLIFICATION
2
Quantity
1.0 mm (t) glass epoxy PCB
PRELIMINARY DATA SHEET
NPN SiGe RF TRANSISTOR FOR
3-PIN ULTRA SUPER MINIMOLD
Symbol
NPN SILICON GERMANIUM RF TRANSISTOR
P
V
V
V
T
tot
CBO
CEO
EBO
I
T
C
stg
Note
j
A
= +25 C)
CE
= 1 V, I
• 8 mm wide embossed taping
• Pin 3 (Collector) face the perforation side of the tape
65 to +150
Ratings
C
200
150
1.5
= 3 mA, f = 2 GHz
13
40
5
CEO
(absolute maximum ratings) = 5.0 V
Unit
mW
mA
Supplying Form
V
V
V
C
C
NESG204619
NEC Compound Semiconductor Devices 2004

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NESG204619 Summary of contents

Page 1

... Pin 3 (Collector) face the perforation side of the tape = + Symbol Ratings Unit V 13 CBO V 5 CEO V 1.5 EBO Note P 200 mW tot T 150 +150 stg NESG204619 Supplying Form  NEC Compound Semiconductor Devices 2004 ...

Page 2

... Sopt L Lopt mA GHz Sopt L Lopt Note mA MHz CB E 350 s, Duty Cycle 2% Preliminary Data Sheet PU10465EJ01V0DS NESG204619 MIN. TYP. MAX. Unit 100 nA 100 nA 140 180 220 15 18 GHz 0.8 1.5 dB 9.0 11.0 dB 0.2 0.4 ...

Page 3

... PACKAGE DIMENSIONS 3-PIN ULTRA SUPER MINIMOLD (UNIT: mm) 1.6±0.1 0.8±0 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector Preliminary Data Sheet PU10465EJ01V0DS NESG204619 3 ...

Page 4

... NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). 4 Preliminary Data Sheet PU10465EJ01V0DS NESG204619 Not all The M8E 00 0110 ...

Page 5

... TEL: +886-2-8712-0478 Taipei Branch Office TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 http://www.ncsd.necel.com/ FAX: +852-3107-7309 FAX: +886-2-2545-3859 FAX: +82-2-558-5209 NESG204619 0310 ...

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