BLS3135-10 NXP Semiconductors, BLS3135-10 Datasheet - Page 6
BLS3135-10
Manufacturer Part Number
BLS3135-10
Description
Bls3135-10 Microwave Power Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.BLS3135-10.pdf
(12 pages)
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Philips Semiconductors
2000 Feb 01
handbook, full pagewidth
Microwave power transistor
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (
The other side is unetched and serves as a ground plane.
C1 = 10 pF (ATC 100A); C2 = 100 pF (ATC 100A).
Fig.8 Component layout for 3.1 to 3.5 GHz class-C test circuit.
30
6
C2
30
C1
r
= 2.2), thickness 0.38 mm.
MCD862
40
BLS3135-10
Product specification
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