NE680M03 Renesas Electronics Corporation., NE680M03 Datasheet - Page 2

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NE680M03

Manufacturer Part Number
NE680M03
Description
Npn Silicon Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet
BJT NONLINEAR MODEL PARAMETERS
NONLINEAR MODEL
SCHEMATIC
(1) Gummel-Poon Model
Parameters
RBM
VAR
MJE
CJC
VAF
CJE
VJE
ISE
ISC
IRB
VJC
IKF
NR
NC
RC
BR
IKR
RE
RB
BF
NF
NE
IS
0.358e-12
0.162e-12
5.98e-16
6.85e-3
1.0e-6
1.5e-9
1.04
0.02
1.04
0.50
8.54
4e-4
0.86
0.52
179
100
Q1
0.5
17
30
16
10
20
2
Parameters
Base
XCJC
MJC
MJS
XTB
CJS
VJS
PTF
XTF
VTF
FC
EG
TF
ITF
XTI
KF
TR
AF
L
BX
0.635e-9
8.7e-12
0.15
0.75
0.04
1.11
120
L
0.5
0.3
Q1
20
B
1
0
0
0
3
0
1
C
(1)
C
CBPKG
CB
Emitter
L
L
E
EX
ADDITIONAL PARAMETERS
MODEL RANGE
Frequency:
Bias:
Date:
UNITS
C
CE
Parameter
time
capacitance
inductance
resistance
voltage
current
C
CEPKG
Q1
Parameters
C
C
L
L
C
C
L
L
L
L
B
E
BX
CX
EX
CX
CB
CE
CBPKG
CEPKG
0.1 to 3.0 GHz
V
11/98
CE
= 0.5 V to 6 V, I
Collector
C
= 0.5 mA to 15 mA
0.08e-12
0.08e-12
0.4e-9
0.8e-9
0.08e-12
0.08e-12
0.12e-9
0.10e-9
0.12e-9
680M03
seconds
farads
henries
ohms
volts
amps
Units

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