NE5510179A Renesas Electronics Corporation., NE5510179A Datasheet - Page 3

• Manufacturer Part Number: NE5510179A
• Description: 3.5v Operation Silicon Rf Power Mosfet For 1.9 Ghz Transmission Amplifiers
• Manufacturer: Renesas Electronics Corporation.

TYPICAL PERFORMANCE CURVES
P.C.B. LAYOUT
31
26
21
16
11
30
25
20
15
10
6
5
0
0
OUTPUT POWER, DRAIN CURRENT,
OUTPUT POWER, DRAIN CURRENT,
V
I
freq = 1.9 GHz
EFFICIENCY, AND POWER ADDED
EFFICIENCY, AND POWER ADDED
DQ
V
I
freq = 1.9 GHz
Drain
DS
DQ
EFFICIENCY VS. INPUT POWER
DS
EFFICIENCY VS. INPUT POWER
= 200 mA,
= 3.5 V,
= 200 mA,
= 2.8 V,
5
5
Input Power, P
Source
Input Power, P
P
P
1
O
O
10
10
0.5
P
P
= 29.7 dBm
(Units in mm)
= 28.7 dBm
OUT
OUT
4.0
1.7
6.1
IN
15
IN
15
(dBm)
(dBm)
0.5
I
D
I
D
20
20
Through hole
ADD
ADD
25
Gate
25
1250
1000
750
500
250
0
1250
1000
750
500
250
0
(T
100
50
0
100
0.2
A
50
0
= 25 C)
33
Note:
1. Use rosin or other material to prevent solder from penetrating
through-holes.
30
29
28
27
26
25
31
30
29
28
27
26
0.0
0.0
OUTPUT POWER, DRAIN CURRENT,
OUTPUT POWER, DRAIN CURRENT,
EFFICIENCY VS. GATE TO SOURCE
EFFICIENCY VS. GATE TO SOURCE
V
freq = 1.9 GHz,
PIN = 22 dBm
EFFICIENCY, AND POWER ADDED
EFFICIENCY, AND POWER ADDED
V
freq = 1.9 GHz,
P
DS
DS
IN
Gate to Source Voltage, V
Gate to Source Voltage, V
= 22 dBm
= 3.5 V,
= 2.8 V,
P
MAX
P
MAX
1.0
1.0
= 29.0 dBm
APC
APC
= 30.1 dBm
VOLTAGE
P
VOLTAGE
P
OUT
OUT
2.0
2.0
I
I
ds
DS
GS
3.0
3.0
GS
ADD
ADD
(V)
(V)
NE5510179A
4.0
4.0
1250
1250
1000
750
500
250
0
1000
750
500
250
0
100
50
0
100
50
0