RTR025N03 ROHM Co. Ltd., RTR025N03 Datasheet - Page 2

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RTR025N03

Manufacturer Part Number
RTR025N03
Description
2.5v Drive Nch Mos Fet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistors
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
V
GS (th)
DS (on)
C
d (on)
d (off)
Q
Q
Y
GSS
DSS
Q
t
t
oss
SD
iss
rss
r
gd
fs
f
gs
g
Min.
Min.
0.5
2.0
30
Typ.
Typ.
220
3.3
0.7
1.0
66
70
95
60
35
15
25
10
9
Max.
Max.
133
1.2
1.5
4.6
10
92
98
1
Unit
Unit
mΩ
mΩ
mΩ
µA
µA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
S
V
V
I
V
V
I
I
I
V
V
V
f=1MHz
V
I
V
R
R
V
I
R
I
D
D
D
D
D
D
S
GS
DS
DS
DS
DS
GS
DD
GS
L
G
DD
L
= 0.8A, V
= 1mA, V
= 2.5A, V
= 2.5A, V
= 2.5A, V
= 1.25A
= 2.5A
=12Ω
=6Ω
=10Ω
= 30V, V
= 10V, I
= 10V, I
= 10V
=12V, V
=0V
= 4.5V
15V
15 V
Conditions
Conditions
GS
GS
GS
GS
GS
D
D
DS
GS
= 1mA
= 2.5A
V
R
=0V
= 4.5V
= 4V
= 2.5V
=0V
=0V
=0V
GS
G
=10Ω
= 4.5V
RTR025N03
2/2

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