RSU002N06 ROHM Co. Ltd., RSU002N06 Datasheet

no-image

RSU002N06

Manufacturer Part Number
RSU002N06
Description
2.5v Drive Nch Mosfet
Manufacturer
ROHM Co. Ltd.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RSU002N06
Manufacturer:
ROHM
Quantity:
30 000
Part Number:
RSU002N06GZT106
Manufacturer:
TECHWELL
Quantity:
66
Part Number:
RSU002N06T106
Manufacturer:
ROHM/罗姆
Quantity:
20 000
2.5V Drive Nch MOSFET
Structure
Silicon N-channel MOSFET
Features
1) High speed switing.
2) Small package(UMT3).
3) Low voltage drive(2.5V drive).
Application
Switching
Packaging specifications
Absolute maximum ratings (Ta = 25C)
Thermal resistance
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
* Each terminal mounted on a recommended land.
RSU002N06
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Range of storage temperature
Channel to ambient
c
www.rohm.com
RSU002N06
2010 ROHM Co., Ltd. All rights reserved.
Type
Package
Code
Basic ordering unit (pieces)
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
Rth (ch-a)
Symbol
Symbol
Taping
T106
3000
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
I
DP
SP
D
S
D
*1
*1
*2
*
55 to +150
Limits
Limits
250
150
200
150
625
20
60
1
1
1/5
Dimensions (Unit : mm)
Inner circuit
C / W
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
UMT3
(SC-70)
<SOT-323>
mW
Unit
Unit
mA
mA
C
C
V
V
A
A
(2)
Abbreviated symbol : RK
∗1
(1)
(3)
∗2
(1) SOURCE
(2) GATE
(3) DRAIN
2010.04 - Rev.A

Related parts for RSU002N06

RSU002N06 Summary of contents

Page 1

... Small package(UMT3). 3) Low voltage drive(2.5V drive). Application Switching    Packaging specifications Package Type Code Basic ordering unit (pieces) RSU002N06 Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage Gate-source voltage Continuous Drain current Pulsed Continuous Source current (Body Diode) Pulsed ...

Page 2

... RSU002N06 Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage I Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current I Gate threshold voltage V GS (th) Static drain-source on-state R DS (on) resistance Forward transfer admittance l Y Input capacitance C Output capacitance C Reverse transfer capacitance C Turn-on delay time ...

Page 3

... RSU002N06 Electrical characteristic curves 0.5 Ta= 25C Pulsed 0 10V 4. 4. 2. 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : V [V] DS Fig.1 Typical Output Characteristics(Ⅰ) 100 Ta= 25 2.5V GS Pulsed 10V GS 1 0.1 0.001 0.01 0.1 1 DRAIN-CURRENT : I [A] D Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) ...

Page 4

... RSU002N06 1 V =0V GS Pulsed 0.1 Ta=125 C 0.01 Ta=75C Ta=25C Ta=-25C 0.001 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : V [V] SD Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 100 Ta=25C f=1MHz V =0V GS Ciss 10 Crss Coss 1 0.01 0 100 DRAIN-SOURCE VOLTAGE : V [V] DS Fig.13 Typical Capacitance vs. Drain-Source Voltage www.rohm.com ○ 2010 ROHM Co., Ltd. All rights reserved. ...

Page 5

... RSU002N06 Measurement circuits D.U. Fig.1-1 Switching time measurement circuit Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com ○ 2010 ROHM Co., Ltd. All rights reserved. ...

Page 6

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

Related keywords