RJK5018DPK Renesas Electronics Corporation., RJK5018DPK Datasheet
RJK5018DPK
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RJK5018DPK Summary of contents
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... RJK5018DPK Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current ...
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... RJK5018DPK Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time ...
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... RENESAS Code TO-3P SC-65 PRSS0004ZE-A 1.6 1.4 Max 5.45 ± 0.5 Ordering Information Part Name RJK5018DPK-00 360 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00 May 11, 2006 page Previous Code MASS[Typ.] TO-3P / TO-3PV 5.0g 4.8 ± ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...