RJK5015DPK Renesas Electronics Corporation., RJK5015DPK Datasheet

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RJK5015DPK

Manufacturer Part Number
RJK5015DPK
Description
Silicon N Channel Mos Fet High Speed Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RJK5015DPK
Manufacturer:
RENESAS
Quantity:
12 500
Part Number:
RJK5015DPK-E0
Manufacturer:
RENESAS
Quantity:
12 500
RJK5015DPK
Silicon N Channel MOS FET
High Speed Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
REJ03G1360-0200 Rev.2.00 Apr 18, 2007
Page 1 of 6
Low on-resistance
Low leakage current
High speed switching
2. Value at Tc = 25 C
3. STch = 25 C, Tch
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
10 s, duty cycle
Item
1
2
150 C
3
1%
I
I
DR (pulse)
D (pulse)
Symbol
Pch
E
I
AP
V
V
AR
Tstg
Tch
ch-c
I
G
GSS
I
DSS
DR
Note3
D
Note3
Note2
Note1
Note1
D
S
–55 to +150
Ratings
0.833
500
±30
150
150
2.7
25
75
25
75
7
1. Gate
2. Drain (Flange)
3. Source
REJ03G1360-0200
Unit
Apr 18, 2007
C/W
mJ
W
V
V
A
A
A
A
A
C
C
(Ta = 25°C)
Rev.2.00

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RJK5015DPK Summary of contents

Page 1

... RJK5015DPK Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current ...

Page 2

... RJK5015DPK Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time ...

Page 3

... RJK5015DPK Main Characteristics Power vs. Temperature Derating 400 300 200 100 0 50 100 Case Temperature Tc (°C) Typical Output Characteristics 50 Pulse Test Drain to Source Voltage V Static Drain to Source on State Resistance vs. Drain Current 0.5 0.2 0.1 0.05 0.02 0. Drain Current I REJ03G1360-0200 Rev ...

Page 4

... RJK5015DPK Body-Drain Diode Reverse Recovery Time 1000 500 200 100 100 A / µ Reverse Drain Current Dynamic Input Characteristics 800 100 V DD 600 250 V 400 400 200 V = 400 V DD 250 V 100 V 20 ...

Page 5

... RJK5015DPK Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.3 0.1 0.03 0.01 10 µ 100 µ Switching Time Test Circuit Vin Monitor D.U.T. 10 Ω Vin 10 V REJ03G1360-0200 Rev.2.00 Apr 18, 2007 Page θ ch – c (t) = θ ch – 0.833 100 m Pulse Width PW (s) Vout ...

Page 6

... RJK5015DPK Package Dimensions Package Name JEITA Package Code RENESAS Code TO-3P SC-65 PRSS0004ZE-A 1.6 1.4 Max 5.45 ± 0.5 Ordering Information Part No. RJK5015DPK-00-T0 360 pcs REJ03G1360-0200 Rev.2.00 Apr 18, 2007 Page Previous Code MASS[Typ.] TO-3P / TO-3PV 5.0g 4.8 ± 0.2 15.6 ± 0.3 φ 3.2 ± 0.2 2.0 1.0 ± 0.2 0.6 ± 0.2 3.6 0.9 1.0 5.45 ± 0.5 Quantity Box (Tube) Unit: mm 1.5 2.8 Shipping Container ...

Page 7

Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained ...

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