RJK1535DPE Renesas Electronics Corporation., RJK1535DPE Datasheet - Page 5

• Manufacturer Part Number: RJK1535DPE
• Description: Silicon N Channel Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

RJK1535DPJ, RJK1535DPE, RJK1535DPF
REJ03G0479-0300 Rev.3.00
Jun 30, 2010
50
20
10
30
40
0
0.03
0.01
0.3
0.1
Vin
10 V
Source to Drain Voltage
3
1
10 μ
5 V
Vin Monitor
10 Ω
Switching Time Test Circuit
10 V
0.4
D = 1
0.5
Reverse Drain Current vs.
Source to Drain Voltage
0.8
100 μ
V
D.U.T.
Normalized Transient Thermal Impedance vs. Pulse Width
GS
1.2
= 0 V
Pulse Test
V
R
1.6
SD
V
= 75 V
L
DD
1 m
Vout
Monitor
(V)
Pulse Width
2.0
10 m
td(on)
PW (s)
5
4
3
2
1
0
Vout
-25
Vin
V
θch – c(t) = γs (t) • θch – c
θch – c = 1.25°C/W, Tc = 25°C
P
DS
DM
0
100 m
Gate to Source Cutoff Voltage
= 10 V
Case Temperature
10%
10%
vs. Case Temperature
25
90%
tr
Waveform
PW
T
50
I
D
td(off)
75
1
= 10 mA
90%
Tc = 25°C
D =
100
Tc (°C)
0.1 mA
90%
PW
1 mA
125
T
10%
Preliminary
10
t f
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