RUM002N05 ROHM Co. Ltd., RUM002N05 Datasheet

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... High speed switing. 2) Small package(VMT3). 3)Ultra low voltage drive(1.2V drive).  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RUM002N05  Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage Gate-source voltage Continuous Drain current Pulsed Continuous Source current ...

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... RUM002N05 Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage I Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current I Gate threshold voltage V GS (th) Static drain-source on-state R DS (on) resistance Forward transfer admittance l Y Input capacitance C Output capacitance C Reverse transfer capacitance C Turn-on delay time ...

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... RUM002N05 Electrical characteristic curves 0 4. 2.5V GS Ta=25°C 0.3 V =1.8V GS Pulsed V =1. 1. 1. 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : V [V] DS Fig.1 Typical Output Characteristics 100 Ta= 25°C V =1.2V GS Pulsed 0.1 0.01 0.1 1 DRAIN-CURRENT : I [A] D Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 100 ...

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... RUM002N05 10V DS Pulsed Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.001 0.01 0.1 1 DRAIN-CURRENT : I [A] D Fig.10 Forward Transfer Admittance vs. Drain Current 1000 Ta=25°C V =30V DD V =4. =10 100 G t Pulsed d(off d(on) 1 0.01 0.1 1 DRAIN-CURRENT : I [A] D Fig.13 Switching Characteristics www.rohm.com ○ ...

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... RUM002N05 Measurement circuits D.U. Fig.1-1 Switching time measurement circuit Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com ○ 2010 ROHM Co., Ltd. All rights reserved. c Pulse width ...

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