BSN304 NXP Semiconductors, BSN304 Datasheet - Page 2

• Manufacturer Part Number: BSN304
• Description: N-channel Enhancement Mode Vertical D-mos Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a TO-92 variant package.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an epoxy printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead
2001 Dec 11
V
I
P
V
R
V
V
V
I
I
P
T
T
SYMBOL
SYMBOL
D
D
DM
stg
j
Direct interface to C-MOS, TTL, etc.
High-speed switching
No secondary breakdown.
Line current interruptor in telephone sets
Relay, high-speed and line transformer drivers.
DS
tot
GSO
GSoff
DS
GSO
tot
DSon
N-channel enhancement mode
vertical D-MOS transistor
minimum 10 mm x 10 mm.
drain-source voltage (DC)
drain current (DC)
total power dissipation
gate-source voltage
drain-source on-state resistance
gate-source cut-off voltage
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
PARAMETER
PARAMETER
T
open drain
I
I
open drain
T
D
D
amb
amb
= 250 mA; V
= 1 mA; V
25 C
25 C; note 1
2
CONDITIONS
CONDITIONS
PINNING - TO-92 variant
handbook, halfpage
GS
GS
PIN
= V
1
2
3
= 10 V
DS
1
Fig.1 Simplified outline and symbol.
2
3
gate
drain
source
0.8
55
DESCRIPTION
MIN.
MIN.
MAM146
Product specification
300
300
1
6
2
300
300
1.2
1
+150
150
g
20
20
MAX.
MAX.
BSN304
d
s
V
mA
W
V
V
V
V
mA
A
W
C
C
UNIT
UNIT