FQB32N12V2 Fairchild Semiconductor, FQB32N12V2 Datasheet - Page 3

• Manufacturer Part Number: FQB32N12V2
• Description: Fqb32n12v2/fqi32n12v2 120v N-channel Mosfet
• Manufacturer: Fairchild Semiconductor

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
3500
3000
2500
2000
1500
1000
500
0
160
140
120
100
10
10
10
10
80
60
40
20
0
Figure 5. Capacitance Characteristics
2
1
0
10
-1
Figure 3. On-Resistance Variation vs
0
-1
Top :
Bottom : 4.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
10.0 V
15.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
V
20
GS
V
V
DS
DS
, Drain-Source Voltage [V]
40
, Drain-Source Voltage [V]
10
I
10
D
0
, Drain Current [A]
0
C
C
C
oss
iss
rss
60
V
GS
= 10V
80
C
C
C
iss
oss
rss
= C
= C
= C
10
10
gs
gd
※ Note : T
ds
※ Notes :
1
1
+ C
+ C
1. 250μ s Pulse Test
2. T
gd
V
gd
C
100
(C
= 25℃
GS
※ Notes ;
1. V
2. f = 1 MHz
ds
= 20V
J
= shorted)
= 25 ℃
GS
= 0 V
120
10
10
10
10
12
10
10
10
10
10
8
6
4
2
0
-1
2
1
0
-1
0.2
2
1
0
0
2
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
25
o
C
Variation with Source Current
0.4
175
175 ℃
10
o
C
4
0.6
V
V
and Temperature
SD
Q
GS
V
DS
, Source-Drain voltage [V]
G
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
= 96V
V
25 ℃
DS
20
0.8
V
= 60V
-55
DS
o
= 30V
C
6
1.0
30
1.2
※ Notes :
※ Notes :
1. V
2. 250 μ s Pulse Test
1. V
2. 250μ s Pulse Test
8
GS
DS
※ Note : I
= 40V
= 0V
40
1.4
D
= 32A
Rev. A, December 2003
1.6
10
50