FQB7N65C Fairchild Semiconductor, FQB7N65C Datasheet - Page 3

• Manufacturer Part Number: FQB7N65C
• Description: Fqb7n65c 650v N-channel Mosfet
• Manufacturer: Fairchild Semiconductor

FQB7N65C Rev. A
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Figure 5. Capacitance Characteristics
10
10
10
2000
1600
1200
-1
1
0
800
400
3.0
2.5
2.0
1.5
1.0
0
10
Top :
Bottom : 5.0 V
-1
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
V
0
GS
10
0
V
DS
V
, Drain-Source Voltage [V]
DS
, Drain-Source Voltage [V]
10
I
5
D
0
, Drain Current [A]
C
C
C
iss
oss
rss
V
GS
= 10V
※
10
10
1. 250µs Pulse Test
2. T
Notes :
1
C
C
C
C
iss
oss
rss
V
= 25 ℃
GS
= C
= C
= C
10
= 20V
gs
ds
gd
1
+ C
+ C
※
gd
gd
Note : T
(C
※
1. V
2. f = 1 MHz
ds
Note ;
= shorted)
GS
J
15
= 25 ℃
= 0 V
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
10
10
10
12
10
10
10
8
6
4
2
0
-1
-1
1
0
1
0
0.2
0
2
Variation vs. Source Current
and Temperatue
25
150
0.4
o
C
4
o
C
150 ℃
0.6
4
25 ℃
8
V
V
SD
GS
Q
0.8
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
G
, Total Gate Charge [nC]
-55
V
V
V
DS
12
DS
o
DS
C
1.0
= 520V
= 325V
= 130V
6
1.2
16
※
Note : I
1.4
D
※
= 7A
20
1. V
2. 250µs Pulse Test
Notes :
※
DS
1. V
2. 250µ s Pulse Test
8
= 40V
Notes :
1.6
GS
= 0V
24
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1.8
28
2.0
10