FDU6780A Fairchild Semiconductor, FDU6780A Datasheet - Page 5

• Manufacturer Part Number: FDU6780A
• Description: N-channel Powertrench Mosfet
• Manufacturer: Fairchild Semiconductor

©2009 Fairchild Semiconductor Corporation
FDD6780A / FDU6780A_F071 Rev.C
Typical Characteristics
100
200
100
30
10
0.1
10
10
0.001
1
8
6
4
2
0
Figure 7.
1
0.1
0
Figure 9.
I
D
Figure 11. Forward Bias Safe
= 16.4 A
THIS AREA IS
LIMITED BY r
0.01
3
V
Switching Capability
DS
Gate Charge Characteristics
t
AV
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
T
, TIME IN AVALANCHE (ms)
SINGLE PULSE
T
R
T
Unclamped Inductive
J
Q
J
C
θ
= 150
JC
g
= MAX RATED
DS(on)
= 25
6
, GATE CHARGE (nC)
1
= 4.6
0.1
V
DD
o
o
C
C
= 10 V
T
o
C/W
J
= 125
9
T
1
T
o
J
C
J
= 25 °C unless otherwise noted
= 25
V
12
DD
10
= 16 V
o
C
10
V
DD
15
= 13 V
100 ms
10 us
100 us
1 ms
10 ms
DC
100
18
70
5
2000
1000
3000
1000
Figure 10.
100
100
60
45
30
15
25
10
0
0.1
10
Figure 12. Single Pulse Maximum
Figure 8.
-5
Limited by Package
R
θ
f = 1 MHz
V
Current vs Case Temperature
JC
GS
= 4.6
50
10
= 0 V
V
-4
Maximum Continuous Drain
DS
Power Dissipation
to Source Voltage
o
C/W
V
T
, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain
GS
c
t, PULSE WIDTH (sec)
,
75
CASE TEMPERATURE (
= 10 V
10
-3
1
100
10
-2
V
V
GS
125
GS
10
SINGLE PULSE
R
T
= 4.5 V
= 10 V
C
θ
-1
JC
= 25
o
C )
= 4.6
150
o
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10
C
o
1
C/W
C
C
C
oss
iss
rss
175
30
10