NDB6050L Fairchild Semiconductor, NDB6050L Datasheet

NDB6050L

Manufacturer Part Number

NDB6050L

Description

N-channel Logic Level Enhancement Mode Field Effect Transistor

Manufacturer

Fairchild Semiconductor

Datasheet

1.NDB6050L.pdf (6 pages)

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NDB6050L

Manufacturer:

MOT/ON

Quantity:

12 500

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NDP6050L / NDB6050L

N-Channel Logic Level Enhancement Mode Field Effect Transistor

DSS

DGR

GSS

These logic level N-Channel enhancement mode power field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process has been especially tailored to minimize on-state

resistance, provide superior switching performance, and

withstand high energy pulses in the avalanche and

commutation modes. These devices are particularly suited for

low voltage applications such as automotive, DC/DC

converters, PWM motor controls, and other battery powered

circuits where fast switching, low in-line power loss, and

resistance to transients are needed.

General Description

STG

Parameter

Drain-Source Voltage

Drain-Gate Voltage (R

Gate-Source Voltage - Continuous

Drain Current

Total Power Dissipation @ T

Operating and Storage Temperature

Maximum lead temperature for soldering

purposes, 1/8" from case for 5 seconds

- Nonrepetitive (t

- Continuous

- Pulsed

Derate above 25°C

< 1 M )

= 25°C

< 50 µs)

= 25°C unless otherwise noted

NDP6050L

Features

48A, 50V. R

Low drive requirements allowing operation directly from logic

drivers. V

Critical DC electrical parameters specified at elevated

temperature.

Rugged internal source-drain diode can eliminate the need

for an external Zener diode transient suppressor.

175°C maximum junction temperature rating.

High density cell design for extremely low R

TO-220 and TO-263 (D

and surface mount applications.

GS(TH)

DS(ON)

-65 to 175

< 2.0V.

± 16

± 25

0.67

144

100

275

= 0.025

PAK) package for both through hole

@ V

NDB6050L

= 5V.

NDP6050L Rev. C / NDB6050L Rev. D

DS(ON)

April 1996

Units

W/°C

°C

Related parts for NDB6050L

NDB6050L Summary of contents

Page 1

... C NDP6050L < 50 µ 25°C = 0.025 @ V = 5V. DS(ON) GS < 2.0V. GS(TH) . DS(ON) 2 PAK) package for both through hole NDB6050L 50 50 ± 16 ± 144 100 0.67 -65 to 175 275 NDP6050L Rev NDB6050L Rev. D April 1996 Units W/°C °C °C ...

Page 2

... T = 125°C J 100 -100 125°C 0.65 1.5 J 0.025 0. 125° 1630 2000 460 800 150 400 15 30 320 500 49 100 161 300 36 60 8.2 21 NDP6050L Rev NDB6050L Rev. D Units µ ...

Page 3

... Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. Conditions (Note 125° /dt = 100 A/µs F Min Typ Max Units 48 A 144 A 1 140 1.5 °C/W 62.5 °C/W NDP6050L Rev NDB6050L Rev. D ...

Page 4

... Voltage and Drain Current 125°C J 25°C -55° DRAIN CURRENT (A) D Current and Temperature 250µ 100 125 T , JUNCTION TEMPERATURE (°C) J Temperature NDP6050L Rev NDB6050L Rev. D 5.5 6 100 = V GS 150 175 ...

Page 5

... Variation with Current and Temperature V = 12V = 48A DS D 48V 24V GATE CHARGE (nC d(off PULSE W IDTH Figure 12. Switching Waveforms NDP6050L Rev NDB6050L Rev 1.6 1 INVERTED ...

Page 6

... Figure 14. Maximum Safe Operating Area 0 ,TIME ( DRAIN-SOURCE VOLTAGE (V ( 1.5 °C/W JC P(pk ( Duty Cycle 100 200 500 NDP6050L Rev NDB6050L Rev. D 1000 ...

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