NDB6020 Fairchild Semiconductor, NDB6020 Datasheet

NDB6020

Manufacturer Part Number

NDB6020

Description

N-channel Logic Level Enhancement Mode Field Effect Transistor

Manufacturer

Fairchild Semiconductor

Datasheet

1.NDB6020.pdf (12 pages)

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_______________________________________________________________________________

Absolute Maximum Ratings

Symbol

DSS

DGR

GSS

These logic level N-Channel enhancement mode power

field effect transistors are produced using National's

proprietary, high cell density, DMOS technology. This

very high density process has been especially tailored

to minimize on-state resistance, provide superior

switching performance, and withstand high energy

pulses in the avalanche and commutation modes.

These devices are particularly suited for low voltage

applications such as automotive, DC/DC converters,

PWM motor controls, and other battery powered

circuits where fast switching, low in-line power loss,

and resistance to transients are needed.

NDP6020 / NDB6020

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

STG

Parameter

Drain-Source Voltage

Drain-Gate Voltage (R

Gate-Source Voltage - Continuous

Drain Current

Total Power Dissipation @ T

Operating and Storage Temperature Range

- Continuous

- Pulsed

Derate above 25 ° C

< 1 M )

= 25 ° C

= 25°C unless otherwise noted

Features

NDP6020

35 A, 20 V. R

Critical DC electrical parameters specified at elevated

temperature.

Rugged internal source-drain diode can eliminate the need

for an external Zener diode transient suppressor.

175°C maximum junction temperature rating.

High density cell design for extremely low R

TO-220 and TO-263 (D

hole and surface mount applications.

DS(ON)

-65 to 175

DS(ON)

100

0.4

±8

= 0.028

= 0.023

PAK) package for both through

NDB6020

@ V

= 2.7 V.

= 4.5 V

November 1996

DS(ON)

NDP6020 Rev.C

Units

W/ ° C

°C

Related parts for NDB6020

NDB6020 Summary of contents

Page 1

... NDP6020 / NDB6020 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored ...

Page 2

Electrical Characteristics (T C Symbol Parameter OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate - Body Leakage, Forward GSSF I Gate - Body Leakage, Reverse GSSR ON CHARACTERISTICS (Note 1) V Gate ...

Page 3

Electrical Characteristics (T C Symbol Parameter DRAIN-SOURCE DIODE CHARACTERISTICS I Maximum Continuous Drain-Source Diode Forward Current S I Maximum Pulsed Drain-Source Diode Forward Current SM V Drain-Source Diode Forward Voltage SD Reverse Recovery Time t rr Reverse Recovery Current I ...

Page 4

Typical Electrical Characteristics 4 DRAIN-SOURCE VOLTAGE (V) DS Figure ...

Page 5

Typical Electrical Characteristics =250µ JUNCTION TEM PERATURE (°C) J Figure 7. ...

Page 6

Typical Electrical Characteristics DRAIN CURRENT (A) D Figure 13. Transconductance Variation with Drain Current and Temperature ...

Page 7

... These larger or intermediate boxes then will b e placed finally inside a labeled shipping box whic h still comes in different sizes depending on the number of units shipped. FSCINT Labe l samp le FAIRCHILD SEMICONDUCTOR CORPORATION HTB:B CBVK741B019 1080 LOT: ...

Page 8

TO-220 Tape and Reel Data and Package Dimensions, continued TO-220 (FS PKG Code 37) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 1.4378 September 1998, Rev. A ...

Page 9

TO-263AB/D PAK Tape and Reel Data and Package 2 Dimensions 2 TO-263AB/D PAK Packaging Configuration: Figure 1.0 Customized Label 2 TO-263AB/D PAK Packaging Information Standard L86Z Packaging Option (no flow code) Packaging type TNR Rail/Tube Qty per Reel/Tube/Bag 800 45 ...

Page 10

TO-263AB/D PAK Tape and Reel Data and Package Dimensions, continued 2 2 TO-263AB/D PAK Embossed Carrier Tape Configuration: Figure 3 Pkg type O263AB/ 10.60 15.80 24.0 1. PAK +/-0.10 ...

Page 11

TO-263AB/D PAK Tape and Reel Data and Package Dimensions, continued 2 TO-263AB/D PAK (FS PKG Code 45) 2 Scale 1:1 on letter size paper Dimensions shown below are in: Part Weight per unit (gram): 1.4378 1:1 inches [millimeters] August 1998, ...

Page 12

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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