NDB410A Fairchild Semiconductor, NDB410A Datasheet
NDB410A
Available stocks
Related parts for NDB410A
NDB410A Summary of contents
Page 1
... NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially ...
Page 2
... ALL 250 1 ALL 100 ALL -100 ALL 2 2.9 4 1.4 2.3 3.6 NDP410A 0.2 0.25 NDP410AE NDB410A NDB410AE 0.38 0.5 NDP410B 0.3 NDP410BE NDB410B 0.6 NDB410BE NDP410A 9 NDP410AE NDB410A NDB410AE NDP410B 8 NDP410BE NDB410B NDB410BE ALL 3 4.8 ALL 385 500 ALL 80 100 ALL 20 30 NDP410.SAM Units µ ...
Page 3
... I rr THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case R JC Thermal Resistance, Junction-to-Ambient R JA Notes: 1. NDP410A/410B and NDB410A/410B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0 25°C unless otherwise noted) C Conditions (Note ...
Page 4
Typical Electrical Characteristics 20V DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 2 4. 10V GS 2 ...
Page 5
Typical Electrical Characteristics 1. 250µA D 1.04 1.02 1 0.98 0.96 -50 - JUNCTION TEMPERATURE (°C) J Figure 7. Breakdown Voltage Variation with Temperature. 1000 500 200 100 ...
Page 6
Typical Electrical Characteristics 10V -55° DRAIN CURRENT (A) D Figure 13. Transconductance Variation with Drain Current and Temperature ...