NDB408A Fairchild Semiconductor, NDB408A Datasheet

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NDB408A

Manufacturer Part Number
NDB408A
Description
N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Fairchild Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NDB408A
Manufacturer:
MOT/ON
Quantity:
12 500
Part Number:
NDB408AE
Manufacturer:
MOT/ON
Quantity:
12 500
Part Number:
NDB408AE
Manufacturer:
MOT/ON
Quantity:
20 000
_____________________________________________________________________
Symbol Parameter
V
V
V
I
P
T
T
© 1997 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
D
J
L
NDP408A / NDP408AE / NDP408B / NDP408BE
NDB408A / NDB408AE / NDB408B / NDB408BE
N-Channel Enhancement Mode Field Effect Transistor
General Description
DSS
DGR
GSS
D
These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
,T
STG
Drain-Source Voltage
Drain-Gate Voltage (R
Gate-Source Voltage - Continuous
Drain Current - Continuous
Total Power Dissipation @ T
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
- Nonrepetitive (t
- Pulsed
Derate above 25°C
GS
< 1 M )
P
< 50 s)
C
= 25°C
T
C
= 25°C unless otherwise noted
NDB408A NDB408AE
NDP408A NDP408AE
Features
12 and 11A, 80V. R
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.
175°C maximum junction temperature rating.
High density cell design (3 million/in²) for extremely
low R
TO-220 and TO-263 (D
through hole and surface mount applications.
12
36
DS(ON)
.
-65 to 175
0.33
±20
±40
275
80
80
50
NDB408B NDB408BE
NDP408B NDP408BE
DS(ON)
G
2
PAK) package for both
= 0.16 and 0.20 .
11
33
D
S
May 1994
NDP408.SAM
Units
W/°C
W
°C
°C
V
V
V
V
A
A

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NDB408A Summary of contents

Page 1

... NDP408A / NDP408AE / NDP408B / NDP408BE NDB408A / NDB408AE / NDB408B / NDB408BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially ...

Page 2

... ALL 250 1 ALL 100 ALL -100 ALL 2 2.9 4 1.4 2.3 3.6 NDP408A 0.11 0.16 NDP408AE NDB408A 0.19 0.32 NDB408AE NDP408B 0.2 NDP408BE NDB408B 0.5 NDB408BE NDP408A 11 NDP408AE NDB408A NDB408AE NDP408B 10 NDP408BE NDB408B NDB408BE ALL 3 5.3 ALL 380 500 ALL 115 125 ALL 35 50 NDP408.SAM Units µ ...

Page 3

... I rr THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case R JC Thermal Resistance, Junction-to-Ambient R JA Notes: 1. NDP408A/408B and NDB408A/408B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0 25°C unless otherwise noted) C Conditions (Note ...

Page 4

Typical Electrical Characteristics 20V DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 2 10V GS 1.5 ...

Page 5

Typical Electrical Characteristics 1. 250µA D 1.1 1.05 1 0.95 0.9 -50 - JUNCTION TEMPERATURE (°C) J Figure 7. Breakdown Voltage Variation with Temperature. 1000 500 200 100 ...

Page 6

Typical Electrical Characteristics -55° DRAIN CURRENT (A) D Figure 13. Transconductance Variation with Drain Current and Temperature ...

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