VN1206 Supertex, Inc., VN1206 Datasheet
VN1206
Manufacturer Part Number
VN1206
Description
N-channel Enhancement-mode Vertical Dmos Fets
Manufacturer
Supertex, Inc.
Datasheet
1.VN1206.pdf
(2 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VN1206L
Manufacturer:
VISHAY
Quantity:
7 000
Company:
Part Number:
VN1206L
Manufacturer:
PHILIPS
Quantity:
6 500
Company:
Part Number:
VN1206L
Manufacturer:
NEC
Quantity:
6 221
Ordering Information
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Features
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Low C
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices
Applications
❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Switches
❏ Power supply circuits
❏ Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
BV
BV
120V
ISS
DSS
DGS
and fast switching speeds
/
R
(max)
6.0Ω
DS(ON)
N-Channel Enhancement-Mode
Vertical DMOS FETs
-55°C to +150°C
BV
BV
300°C
± 30V
(min)
I
1.0A
D(ON)
DGS
DSS
1
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Option
Note: See Package Outline section for dimensions.
Order Number / Package
VN1206L
TO-92
TO-92
S G D
VN1206
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VN1206 Summary of contents
Page 1
... Package Option BV DSS BV DGS ± 30V -55°C to +150°C 300°C Note: See Package Outline section for dimensions. 1 VN1206 TO-92 VN1206L TO-92 ...
Page 2
... 10V 0. 0V 25V MHz V = 60V 0. 25Ω GEN 0.25A PULSE R gen INPUT 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com VN1206 I DRM 2.0A OUTPUT D.U.T. 11/12/01 ...