RFD16N03LSM Fairchild Semiconductor, RFD16N03LSM Datasheet

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RFD16N03LSM

Manufacturer Part Number
RFD16N03LSM
Description
16a, 30v, Avalanche Rated N-channel Logic Level Enhancement-mode Power Mosfets
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RFD16N03LSM9A
Manufacturer:
GENNUM
Quantity:
40
Part Number:
RFD16N03LSM9A
Manufacturer:
HARRIS
Quantity:
20 000
December 1995
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Features
• 16A, 30V
• r
• Temperature Compensating PSPICE Model
• Can be Driven Directly from CMOS, NMOS,
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• +175
Description
The RFD16N03L and RFD16N03LSM are N-channel power
MOSFETs manufactured using the MegaFET process. This
process, which uses feature sizes approaching those of
LSI circuits, gives optimum utilization of silicon, resulting in
outstanding performance. They were designed for use in
applications such as switching regulators, switching convert-
ers, motor drivers and relay drivers. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate bias in the 3V - 5V
range, thereby facilitating true on-off power control directly
from logic level (5V) integrated circuits.
NOTE: When ordering, use the entire part number. Add the suffix
9A, to obtain the TO-252AA variant in tape and reel, e.g.
RFD16N03LSM9A.
Formerly developmental type TA49030.
Absolute Maximum Ratings
RFD16N03L
RFD16N03LSM
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Power Dissipation
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
and TTL Circuits
DS(ON)
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
T
Derate above +25
PART NUMBER
C
©
= +25
o
Harris Corporation 1995
S E M I C O N D U C T O R
C Operating Temperature
= 0.022
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
PACKAGE AVAILABILITY
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TO-251AA
TO-252AA
PACKAGE
T
C
= +25
16N03L
16N03L
o
C
16A, 30V, Avalanche Rated N-Channel Logic Level
BRAND
5-31
Packaging
Symbol
Enhancement-Mode Power MOSFETs
DRAIN (FLANGE)
STG
RFD16N03LSM
DGR
DSS
, T
DM
GS
AS
D
D
L
J
GATE
GATE
SOURCE
RFD16N03L,
Refer to Peak Current Curve
JEDEC TO-251AA
JEDEC TO-252AA
Refer to UIS Curve
RFD16N03LSM
RFD16N03L,
-55 to +175
SOURCE
DRAIN
0.606
260
30
30
16
90
10
SOURCE
DRAIN (FLANGE)
DRAIN
File Number
GATE
UNITS
W/
o
o
W
V
V
V
A
C
C
4013.1
o
C

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RFD16N03LSM Summary of contents

Page 1

... UIS Rating Curve o • +175 C Operating Temperature Description The RFD16N03L and RFD16N03LSM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching convert- ers, motor drivers and relay drivers ...

Page 2

... Specifications RFD16N03L, RFD16N03LSM Electrical Specifications T = +25 C PARAMETERS Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current On Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge ...

Page 3

... T , CASE TEMPERATURE ( C FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE PULSE DURATION = 250 s, T 100 V = 10V 1.0 2.0 3 DRAIN-TO-SOURCE VOLTAGE (V) DS FIGURE 5. TYPICAL SATURATION CHARACTERISTICS RFD16N03L, RFD16N03LSM + 0.5 100 s 0.2 0.1 1ms 0.1 .05 10ms .02 .01 100ms DC SINGLE PULSE 0. FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL ...

Page 4

... FIGURE 9. NORMALIZED r vs JUNCTION DS(ON) TEMPERATURE V = 15V 250 200 150 100 GATE-TO-SOURCE RESISTANCE ( ) GS FIGURE 11. TYPICAL SWITCHING TIME AS A FUNCTION OF GATE RESISTANCE RFD16N03L, RFD16N03LSM (Continued 250 A D 2.0 1.5 1.0 0.5 0.0 120 160 200 -80 - FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE V = 5V, I ...

Page 5

... Typical Performance Curves 2500 2000 1500 1000 500 DRAIN-TO-SOURCE VOLTAGE (V) DS FIGURE 13. TYPICAL CAPACITANCE vs VOLTAGE 1.2 1.0 0.8 0.6 0.4 0.2 0.0 FIGURE 15. NORMALIZED POWER DISSIPATION vs TEMPERATURE DERATING CURVE RFD16N03L, RFD16N03LSM (Continued) 200 1MHz GS 100 C ISS STARTING OSS t = (L)( =(L/R)ln[(I AV ...

Page 6

... Test Circuits and Waveforms VARY t TO OBTAIN P R REQUIRED PEAK FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING TEST CIRCUIT RFD16N03L, RFD16N03LSM DUT I L 0.01 FIGURE 17. UNCLAMPED ENERGY WAVEFORMS DD t D(ON 90% ...

Page 7

... Temperature Compensated PSPICE Model for the RFD16N03L, RFD16N03LSM .SUBCKT RFD16N03L rev 12/12/ 2.55e 2.64e-9 CIN 6 8 1.45e-9 DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 33.3 EDS EGS ESG GATE ...

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