MTDF2N06HD ON Semiconductor, MTDF2N06HD Datasheet

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MTDF2N06HD

Manufacturer Part Number
MTDF2N06HD
Description
Power Mosfet 2 Amps, 60 Volts
Manufacturer
ON Semiconductor
Datasheet

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MTDF2N06HD
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MTDF2N06HD
Power MOSFET
2 Amps, 60 Volts
N−Channel Micro8t, Dual
contain monolithic back−to−back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature ultra low R
logic level performance. They are capable of withstanding high energy in
the avalanche and commutation modes and the drain−to−source diode has
a very low reverse recovery time. Typical applications are dc−dc
converters, and power management in portable and battery powered
products such as computers, printers, cellular and cordless phones. They
can also be used for low voltage motor controls in mass storage products
such as disk drives and tape drives.
1. When mounted on 1″ square FR−4 or G−10 board (V
2. Repetitive rating; pulse width limited by maximum junction temperature.
3. When mounted on FR−4 board, t ≤ 10 seconds
THERMAL RESISTANCE
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
MAXIMUM RATINGS
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage − Continuous
Continuous Drain Current @ T
Total Power Dissipation @ T
Operating and Storage Temperature Range
Continuous Source Current (Diode
Junction−to−Ambient (Note 1.)
Micro8 devices are an advanced series of Power MOSFETs that
Life
Ultra Low R
Miniature Micro8 Surface Mount Package − Saves Board Space
Diode is Characterized for Use in Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
I
Mounting Information for Micro8 Package Provided
10 Seconds)
DSS
(Note 1.)
Pulsed Drain Current (Note 2.)
(Note 1.)
Conduction) (Note 3.)
Specified at Elevated Temperature
DS(on)
Parameter
Provides Higher Efficiency and Extends Battery
(T
GS
J
= 25°C unless otherwise noted)
A
Preferred Device
= 1.0 MΩ)
= 25°C
A
= 25°C
Symbol
T
V
V
R
V
J
I
P
DGR
, T
DSS
DM
I
I
θJA
GS
D
S
D
stg
GS
= 10 V, @
− 55 to
DS(on)
Max
± 20
1.25
150
100
1.5
0.9
60
60
12
1
and true
°C/W
Unit
Vdc
Vdc
Vdc
Adc
Adc
°C
W
Preferred devices are recommended choices for future use
and best overall value.
MTDF2N06HDR2
8
Device
Source−1
Source−2
Gate−1
Gate−2
ORDERING INFORMATION
G
R
WW
1
DS(on)
PIN ASSIGNMENT
http://onsemi.com
2 AMPERES
60 VOLTS
Micro8, Dual
CASE 846A
STYLE 2
= Date Code
Package
2
3
4
N−Channel
Top View
D
Micro8
1
= 220 mW
Publication Order Number:
S
8
7
6
5
4000 Tape & Reel
MTDF2N06HD/D
MARKING
DIAGRAM
Shipping
Drain−1
Drain−1
Drain−2
Drain−2
WW
BA

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MTDF2N06HD Summary of contents

Page 1

... Micro8, Dual CASE 846A WW STYLE Date Code PIN ASSIGNMENT 1 8 Drain− Gate−1 Drain−1 Drain− Gate−2 Drain− Top View ORDERING INFORMATION Package Shipping Micro8 4000 Tape & Reel Publication Order Number: MTDF2N06HD/D ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ( Vdc 0.25 mAdc Zero Gate Voltage Drain Current ( Vdc Vdc Vdc ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 4 3 6 4 0.2 0.4 0.6 0.8 1.0 1 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Δt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

... RR Compared to ON Semiconductor standard cell density low voltage MOSFETs, high cell density MOSFET diodes are faster (shorter t reverse recovery characteristic. The softness advantage of the high cell density diode means they can be forced through ...

Page 6

The Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (T ...

Page 7

INFORMATION FOR USING THE Micro8 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure ...

Page 8

For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control settings ...

Page 9

... K 4.75 5.05 0.187 0.199 L 0.40 0.70 0.016 0.028 STYLE 2: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MTDF2N06HD/D ...

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