MTD2955V ON Semiconductor, MTD2955V Datasheet

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MTD2955V

Manufacturer Part Number
MTD2955V
Description
Power Mosfet 12 A, 60 V
Manufacturer
ON Semiconductor
Datasheet

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Part Number
Manufacturer
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Price
Part Number:
MTD2955V
Manufacturer:
MOT/ON
Quantity:
12 500
Part Number:
MTD2955VT4
Manufacturer:
ONSEMI
Quantity:
905
MTD2955V
Power MOSFET 12 A, 60 V
P−Channel DPAK
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Features
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 8
MAXIMUM RATINGS
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
2. When surface mounted to an FR4 board using the 0.5 sq.in. pad size.
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage
Drain Current − Continuous
Drain Current
Drain Current
Total Power Dissipation
Total Power Dissipation @ 25°C (Note 2)
Operating and Storage Temperature
Single Pulse Drain−to−Source Avalanche
Thermal Resistance
Maximum Lead Temperature for Soldering
This Power MOSFET is designed to withstand high energy in the
Avalanche Energy Specified
I
Pb−Free Packages are Available
DSS
− Continuous
− Non−repetitive (t
Derate above 25°C
Range
Energy − Starting T
(V
I
− Junction to Case
− Junction to Ambient (Note 1)
− Junction to Ambient (Note 2)
Purposes, 1/8″ from case for 10
seconds
pad size.
L
DD
= 12 Apk, L = 3.0 mH, R
and V
= 25 Vdc, V
DS(on)
− Continuous @ 100°C
− Single Pulse (t
Rating
GS
Specified at Elevated Temperature
p
J
≤ 10 ms)
= 10 Vdc, Peak
= 25°C
(T
GS
C
= 25°C unless otherwise noted)
G
= 1.0 MW)
p
= 25 W)
≤ 10 ms)
Symbol
T
V
V
V
R
R
R
V
J
E
I
P
DGR
GSM
, T
DSS
DM
T
I
I
qJC
qJA
qJA
GS
AS
D
D
D
L
stg
−55 to
Value
± 20
± 25
71.4
175
216
100
260
8.0
0.4
2.1
2.5
60
60
12
42
60
1
Watts
Watts
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
mJ
°C
°C
See detailed ordering and shipping information in the
package dimensions section on page 7 of this data sheet.
See general marking information in the device marking
section on page 7 of this data sheet.
DEVICE MARKING INFORMATION
R
ORDERING INFORMATION
DS(on)
1 2
1
2
G
3
http://onsemi.com
3
12 A, 60 V
= 185 mW (Typ)
4
4
P−Channel
Publication Order Number:
D
CASE 369C
CASE 369D
S
STYLE 2
STYLE 2
DPAK−3
DPAK−3
MTD2955V/D

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MTD2955V Summary of contents

Page 1

... See general marking information in the device marking section on page 7 of this data sheet. 1 http://onsemi.com 185 mW (Typ) DS(on) P−Channel DPAK−3 CASE 369C 1 2 STYLE DPAK−3 CASE 369D STYLE ORDERING INFORMATION DEVICE MARKING INFORMATION Publication Order Number: MTD2955V/D ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ( Vdc 0.25 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc Vdc, ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 25° DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0. ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

TOTAL CHARGE (nC) T Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE CHARACTERISTICS ...

Page 6

SINGLE PULSE T = 25° 100 1.0 R LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum ...

Page 7

... ORDERING INFORMATION Device MTD2955V MTD2955VG MTD2955V−1 MTD2955V−1G MTD2955VT4 MTD2955VT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DPAK−3 CASE 369C STYLE 2 Drain 1 Drain Gate Package DPAK− ...

Page 8

... 0.13 (0.005) M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK−3 CASE 369C−01 ISSUE O SEATING −T− PLANE SOLDERING FOOTPRINT* 6 ...

Page 9

... K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MTD2955V/D ...

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