MTD6N20E ON Semiconductor, MTD6N20E Datasheet - Page 3

• Manufacturer Part Number: MTD6N20E
• Description: Power Mosfet 6 Amps, 200 Volts
• Manufacturer: ON Semiconductor

1.2
1.0
0.8
0.6
0.4
0.2
2.5
2.0
1.5
1.0
0.5
12
10
8
6
4
2
0
0
0
− 50
0
0
Figure 3. On−Resistance versus Drain Current
T
V
I
J
D
V
GS
= 25°C
GS
= 3 A
− 25
Figure 5. On−Resistance Variation with
1
= 10 V
Figure 1. On−Region Characteristics
= 10 V
V
2
DS
2
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
0
J
, JUNCTION TEMPERATURE (°C)
I
D
, DRAIN CURRENT (AMPS)
3
and Temperature
4
25
Temperature
T
4
J
−55 °C
= 100°C
25°C
50
6
V
5
TYPICAL ELECTRICAL CHARACTERISTICS
GS
= 10 V
75
6
8
100
7
10
125
http://onsemi.com
8
9 V
6 V
MTD6N20E
5 V
7 V
8 V
150
12
9
3
0.70
0.65
0.60
0.55
0.50
0.45
0.40
100
12
10
10
8
6
4
2
0
1
2
0
0
Figure 4. On−Resistance versus Drain Current
V
V
T
GS
DS
J
= 25°C
≥ 10 V
= 0 V
Figure 6. Drain−To−Source Leakage
3
Figure 2. Transfer Characteristics
V
2
V
DS
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
50
Current versus Voltage
4
I
D
, DRAIN CURRENT (AMPS)
4
and Gate Voltage
5
T
J
100°C
= 125°C
25°C
V
100
6
GS
= 10 V
15 V
6
25°C
T
J
8
= −55°C
7
150
10
100°C
8
200
12
9