SIR874DP Vishay, SIR874DP Datasheet

no-image

SIR874DP

Manufacturer Part Number
SIR874DP
Description
N-channel 25-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIR874DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Base on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
g. Packaged Limited.
Document Number: 64813
S09-0663-Rev. A, 20-Apr-09
Ordering Information: SiR874DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
V
DS
25
(V)
8
6.15 mm
D
7
C
D
= 25 °C.
6
0.0094 at V
0.012 at V
D
PowerPAK SO-8
5
R
Bottom View
D
DS(on)
GS
GS
J
1
(Ω)
= 4.5 V
= 150 °C)
S
b, f
= 10 V
2
S
N-Channel 25-V (D-S) MOSFET
3
S
5.15 mm
4
I
D
G
(A)
20
20
a, g
d, e
A
= 25 °C, unless otherwise noted
Q
Steady State
g
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
8 nC
C
C
C
C
C
(Typ.)
A
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Low Thermal Resistance PowerPAK
• Optimized
• 100 % R
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/96/EC
• Notebook CPU Core
• Game Machine DC/DC High-Side
• Server DC/DC High-Side
Symbol
Symbol
T
R
R
J
Definition
Package with Low 1.07 mm Profile
Operation
- High-Side Switch
V
V
E
I
I
P
, T
I
DM
I
AS
thJA
thJC
DS
GS
AS
D
S
D
stg
g
Tested
®
Gen III Power MOSFET
for
Typical
3.5
27
High-Side
- 55 to 150
3.2
3.9
2.5
Limit
15
12
± 20
29.8
19.0
20
20
20
260
25
50
20
20
b, c
b, c
b, c
b, c
b, c
g
g
g
Maximum
4.2
Synchronous
32
Vishay Siliconix
®
G
SiR874DP
N-Channel MOSFET
www.vishay.com
°C/W
Unit
Unit
D
S
mJ
°C
W
V
A
Rectifier
1

Related parts for SIR874DP

SIR874DP Summary of contents

Page 1

... Bottom View Ordering Information: SiR874DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy ...

Page 2

... SiR874DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... S09-0663-Rev. A, 20-Apr-09 8.0 6.4 4 3.2 1.6 0.0 1.5 2.0 2.5 1300 1040 780 520 = 10 V 260 1.8 1 1.0 0.8 0.6 14.8 18.5 SiR874DP Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss 0 0.0 2.4 4.8 7.2 9 Drain-to-Source Voltage (V) DS ...

Page 4

... SiR874DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.05 0. °C J 0.03 0.02 0.01 0.00 0.8 1.0 1 250 µ ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.20 1.76 1.32 0.88 0.44 0.00 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiR874DP Vishay Siliconix 150 100 125 150 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com 5 ...

Page 6

... SiR874DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

Related keywords