SIR414DP Vishay, SIR414DP Datasheet

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SIR414DP

Manufacturer Part Number
SIR414DP
Description
N-channel 40-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIR414DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SIR414DP-T1-GE3
Quantity:
70 000
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 64727
S09-0319-Rev. A, 02-Mar-09
Ordering Information: SiR414DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
DS
40
(V)
8
6.15 mm
D
0.0032 at V
0.0028 at V
7
D
R
(www.vishay.com/ppg?64727)
DS(on)
6
D
PowerPAK
GS
5
GS
Bottom View
D
(Ω)
J
= 4.5 V
= 10 V
= 150 °C)
b, f
1
®
S
N-Channel 40-V (D-S) MOSFET
SO-8
2
S
I
3
D
S
50
50
(A)
. The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
5.15 mm
4
a
d, e
G
A
= 25 °C, unless otherwise noted
Q
Steady State
38 nC
g
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
C
C
A
A
C
A
C
C
A
A
(Typ.)
t ≤ 10 s
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Synchronous Rectification
• Secondary Side DC/DC
Symbol
Symbol
T
R
R
Definition
J
V
V
E
I
I
P
, T
DM
I
I
AS
thJC
thJA
DS
GS
D
AS
S
D
stg
g
Tested
®
Power MOSFET
Typical
1.0
18
- 55 to 150
4.9
5.4
3.4
Limit
33
26
± 20
260
50
50
50
40
70
40
80
83
53
b, c
b, c
b, c
b, c
b, c
a
a
a
Maximum
G
1.5
23
Vishay Siliconix
N-Channel MOSFET
SiR414DP
D
S
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SIR414DP Summary of contents

Page 1

... Bottom View Ordering Information: SiR414DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... SiR414DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 64727 S09-0319-Rev. A, 02-Mar-09 New Product 1.5 2.0 6000 4500 3000 1500 SiR414DP Vishay Siliconix 2.0 1 °C C 1.0 0 125 ° 0.0 0.0 0.6 1.2 1.8 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss ...

Page 4

... SiR414DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.1 1.7 1.3 0.9 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.012 0.009 0.006 °C J 0.003 0.000 0.8 1.0 1.2 200 160 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.5 2.0 1.5 1.0 0.5 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiR414DP Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... SiR414DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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