SIR438DP Vishay, SIR438DP Datasheet - Page 4

• Manufacturer Part Number: SIR438DP
• Description: N-channel 25-v D-s Mosfet
• Manufacturer: Vishay

SiR438DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.4
- 0.7
- 1.0
- 0.1
0.01
100
0.5
0.2
0.1
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
T
J
SD
0
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
I
D
= 250 µA
75
T
0.8
J
Limited by R
0.01
= 25 °C
100
0.1
10
100
1
0.01
I
1.0
D
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
= 5 mA
125
T
GS
A
DS(on)
= 25 °C
New Product
> minimum V
V
1.2
150
DS
*
0.1
- Drain-to-Source Voltage (V)
GS
at which R
BVDSS Limited
1
0.010
0.008
0.006
0.004
0.002
0.000
DS(on)
200
160
120
80
40
0
0
10
0 .
0
0
is specified
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
1 ms
10 ms
100 ms
1 s
10 s
DC
2
V
0.01
GS
100
- Gate-to-Source Voltage (V)
3
4
Time (s)
0.1
5
S-83093-Rev. A, 29-Dec-08
Document Number: 69029
6
7
T
1
J
T
J
= 125 °C
8
= 25 °C
9
10
1
0