FQT5N20 Fairchild Semiconductor, FQT5N20 Datasheet

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FQT5N20

Manufacturer Part Number
FQT5N20
Description
200v N-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
©2001 Fairchild Semiconductor Corporation
FQT5N20
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply, DC-AC converters for
uninterrupted power supply, motor control.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Resistance, Junction-to-Ambient *
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25° C)
Parameter
G
T
SOT-223
FQT Series
C
C
C
= 25°C unless otherwise noted
S
= 25°C)
= 70°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 1.0A, 200V, R
• Low gate charge ( typical 6.0 nC)
• Low Crss ( typical 6.0 pF)
• Fast switching
• Improved dv/dt capability
DS(on)
Typ
--
G


-55 to +150
FQT5N20
= 1.2
0.25
0.02
300
200
1.0
0.8
4.0
1.0
5.5
2.5
60
 
 
30




S
D
@V






Max
GS
50
Q F E T
= 10 V
May 2001
Units
W/°C
Units
°C/W
V/ns
mJ
mJ
Rev. A, May 2001
°C
°C
W
V
A
A
A
V
A
TM

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FQT5N20 Summary of contents

Page 1

... C = 70°C) C (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) = 25° Parameter May 2001 1 DS(on FQT5N20 Units 200 V 1.0 A 0 1.0 A 0.25 mJ 5.5 V/ns 2.5 W 0.02 W/°C -55 to +150 °C 300 °C Typ Max Units -- 50 °C/W Rev. A, May 2001 TM ...

Page 2

... V = 50V 4.5A, di/dt  300A DSS, 4. Pulse Test : Pulse width  300 s, Duty cycle  2% 5. Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° ...

Page 3

... Drain Current and Gate Voltage 350 300 C iss 250 C 200 oss 150 100 C rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation Notes : 1. 250 s Pulse Test 25 10V 20V ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0  Notes : 250  0.5 D 0.0 -100 100 150 200 o C] Figure 8 ...

Page 5

... Fairchild Semiconductor Corporation (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) Rev. A, May 2001 ...

Page 6

... G G 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...

Page 7

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation DUT DUT + + Driver Driver Same Type Same Type ...

Page 8

... Package Dimensions 3.00 2.30 TYP (0.95) 4.60 6.50 ©2001 Fairchild Semiconductor Corporation SOT-223 0.10 MAX1.80 0.70 0.10 (0.95) 0.25 0.25 0.20 +0.04 0.06 –0.02 +0.10 –0.05 Rev. A, May 2001 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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