NDH854P Fairchild Semiconductor, NDH854P Datasheet - Page 3

• Manufacturer Part Number: NDH854P
• Description: P-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Electrical Characteristics
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
S
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
SD
P
design while R
Typical R
D
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
t
a. 70
b. 125
c. 135
Scale 1 : 1 on letter size paper
JA
R
T
J
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
1a
JA
Parameter
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
T
o
CA
C/W when mounted on a 1 in
A
t
o
o
C/W when mounted on a 0.005 in
C/W when mounted on a 0.026 in
is determined by the user's board design.
R
JC
T
J
R
T
A
CA
t
I
2
D
t
2
pad of 2oz copper.
R
(T
2
2
DS ON @T
A
pad of 2oz copper.
pad of 2oz copper.
= 25°C unless otherwise noted)
J
1b
Conditions
V
GS
= 0 V, I
S
= -1.5 A
(Note 2)
1c
Min
-0.74
Typ
JC
Max
-1.5
-1.2
is guaranteed by
NDH854P Rev.D
Units
A
V