HAT1055R Renesas Electronics Corporation., HAT1055R Datasheet
HAT1055R
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HAT1055R Summary of contents
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... HAT1055R, HAT1055RJ Silicon P Channel Power MOS FET High Speed Power Switching Features Low on-resistance Capable of 4.5 V gate drive High density mounting “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline SOP MOS1 Rev.1.00, Aug.29.2003, page ...
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... HAT1055R, HAT1055RJ Absolute Maximum Ratings ( Item Symbol Drain to source voltage V DSS Gate to source voltage V GSS Drain current I D Drain peak current I (pulse) D Note4 Avalanche current I AP Note4 Avalanche energy E AR Note2 Channel dissipation Pch Note3 Channel dissipation Pch Channel temperature ...
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... HAT1055R, HAT1055RJ Electrical Characteristics ( Item Symbol Min Drain to source breakdown V voltage Gate to Source breakdown voltage V Zero gate voltage drain current I DSS Zero gate voltage HAT1055R I DSS drain current HAT1055RJ I DSS Gate to source leak current I GSS Gate to source cutoff voltage V Forward transfer admittance ...
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... HAT1055R, HAT1055RJ Main Characteristics Power vs. Temperature Derating 4.0 Test Condition: When using the glass epoxy board (FR4 40 40 1.6 mm) PW 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics –10 –10 V –8 –6 V –4.5 V –6 –4 – –2 –4 –6 Drain to Source voltage Rev.1.00, Aug.29.2003, page Maximum Safe Operation Area – ...
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... HAT1055R, HAT1055RJ Drain to Source Saturation Voltage vs. Gate to Source Voltage –1 –0.8 –0.6 –0.4 –0.2 0 –12 0 –4 –8 Gate to Source Voltage Static Drain to Source on State Resistance vs. Temperature 0.25 Pulse Test 0. –1, – 0. –4 0.10 0.05 – – Case Temperature Rev.1.00, Aug.29.2003, page Static Drain to Source on State Resistance 1 ...
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... HAT1055R, HAT1055RJ Body-Drain Diode Reverse Recovery Time 1000 100 500 GS 200 100 –0.1 –0.3 –1 –3 –10 Reverse Drain Current Dynamic Input Characteristics – –25 V –50 V –20 – – – –25 V –50 V – ...
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... HAT1055R, HAT1055RJ Reverse Drain Current vs. Source to Drain Voltage –10 Pulse Test –8 –10 V –6 –5 V – – –0.4 –0.8 –1.2 Source Drain Voltage V SD Avalanche Test Circuit V DS Monitor I Monitor Vin 50 -15 V Switching Time Test Circuit Vin Monitor D ...
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... HAT1055R, HAT1055RJ Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation 0.1 0.01 0.001 0.0001 100 Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation 0.5 0.1 0.01 0.001 0.0001 10 100 1 m Rev.1.00, Aug.29.2003, page f( ( 125 C/ When using the glass epoxy board (FR4 ...
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... HAT1055R, HAT1055RJ Package Dimensions 4.90 5.3 Max 8 1 0.75 Max 1.27 *0.42 ± 0.08 0.40 ± 0.06 *Dimension including the plating thickness Base material dimension Rev.1.00, Aug.29.2003, page 0.10 6.10 – 0.30 + 0.67 0.60 – 0.20 0.15 0.25 M Package Code JEDEC JEITA Mass (reference value January, 2003 Unit: mm 1.08 0˚ – 8˚ FP-8DA Conforms — ...
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Sales Strategic Planning Div. Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble ...