PMWD15UN NXP Semiconductors, PMWD15UN Datasheet
PMWD15UN
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PMWD15UN Summary of contents
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... PMWD15UN Dual N-channel TrenchMOS™ ultra low level FET Rev. 04 — 5 April 2005 1. Product profile 1.1 General description Dual common drain N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS™ technology. 1.2 Features Surface mounting package Very low threshold voltage 1 ...
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... C T 150 4 100 4 pulsed Figure pulsed Rev. 04 — 5 April 2005 PMWD15UN Min - = [1] Figure 2 and 3 - [1] Figure Figure [ [ ...
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... Product data sheet Dual N-channel TrenchMOS™ ultra low level FET 03aa17 I (%) 150 200 Fig 2. Normalized continuous drain current Rev. 04 — 5 April 2005 PMWD15UN 120 der 100 150 V 4 -------------------- - I = 100 % ...
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... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration 9397 750 14713 Product data sheet Dual N-channel TrenchMOS™ ultra low level FET Conditions Figure 4 mounted on a printed-circuit board; minimum footprint; vertical in still air - Rev. 04 — 5 April 2005 PMWD15UN Min Typ Max - - 30 - 100 - 003aaa251 ...
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... MHz Figure 4 Figure /dt = 100 Rev. 04 — 5 April 2005 PMWD15UN Min Typ Max 0.45 0 100 - - 100 8 - 15.3 18 ...
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... Dual N-channel TrenchMOS™ ultra low level FET 003aaa252 V (V) = 1.35 GS 1.3 1.2 1.1 0.6 0 (V) DS Fig 6. Transfer characteristics: drain current as a 003aaa254 4.5 2 (A) D Fig 8. Normalized drain-source on-state resistance Rev. 04 — 5 April 2005 PMWD15UN > DSon ( 150 0 and 150 C; V > I ...
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... C) j Fig 10. Sub-threshold drain current as a function of 003aaa255 (A) C iss C oss C rss (V) DS Fig 12. Source (diode forward) current as a function of Rev. 04 — 5 April 2005 PMWD15UN 3 4 min typ max 0.2 0.4 0.6 0 gate-source voltage 8 150 ...
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... Fig 13. Gate-source voltage as a function of gate charge; typical values 9397 750 14713 Product data sheet Dual N-channel TrenchMOS™ ultra low level FET ( Rev. 04 — 5 April 2005 PMWD15UN 003aaa257 (nC) G © Koninklijke Philips Electronics N.V. 2005. All rights reserved ...
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... 2.5 scale (1) ( 0.30 0.20 3.1 4.5 0.65 0.19 0.13 2.9 4.3 REFERENCES JEDEC JEITA MO-153 Rev. 04 — 5 April 2005 PMWD15UN detail 6.5 0.7 0.94 0.1 0.1 0.1 6.3 0.5 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2005. All rights reserved. SOT530 ...
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... Product data - Product data - Product data - Rev. 04 — 5 April 2005 PMWD15UN Supersedes 9397 750 14713 PMWD15UN-03 data”. values”. characteristics”. 9397 750 12677 PMWD15UN-02 9397 750 11777 PMWD15UN-01 9397 750 10829 - © Koninklijke Philips Electronics N.V. 2005. All rights reserved. ...
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... Trademarks TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 04 — 5 April 2005 PMWD15UN © Koninklijke Philips Electronics N.V. 2005. All rights reserved ...
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... Trademarks Contact information . . . . . . . . . . . . . . . . . . . . 11 PMWD15UN Dual N-channel TrenchMOS™ ultra low level FET © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice ...