NTHD4N02F ON Semiconductor, NTHD4N02F Datasheet - Page 3

• Manufacturer Part Number: NTHD4N02F
• Description: Power Mosfet And Schottky Diode
• Manufacturer: ON Semiconductor

0.15
0.05
0.1
4
2
8
6
0
0
1.5
1.3
0.9
1.7
1.1
0.7
0
0
Figure 3. On−Resistance vs. Gate−to−Source
−50
V
1
I
V
D
V
DS
GS
Figure 1. On−Region Characteristics
GS
= 2.9 A
2.2 V
−25
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
1
= 4.5 V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2
V
V
GS
GS
T
TYPICAL MOSFET PERFORMANCE CURVES
J
, JUNCTION TEMPERATURE (°C)
= 5 V to 3 V
= 2.4 V
3
0
2
4
Voltage
25
Temperature
5
3
50
6
1.8 V
1.4 V
1.6 V
2 V
75
4
7
T
I
T
100
D
J
8
J
= 2.9 A
= 25°C
= 25°C
5
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9
125
NTHD4N02F
10
6
150
3
0.07
0.04
100
0.1
10
1
8
6
4
2
0
2
Figure 4. On−Resistance vs. Drain Current and
1
0
V
(T
GS
Figure 6. Drain−to−Source Leakage Current
V
T
J
V
V
4
DS
J
= 0 V
= 25°C unless otherwise noted)
DS
GS
= 25°C
0.5
≥ 10 V
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I
6
D,
DRAIN CURRENT (AMPS)
25°C
3
1
8
T
Gate Voltage
C
V
V
= −55°C
GS
vs. Voltage
T
GS
10
J
= 100°C
= 4.5 V
= 2.5 V
1.5
12
100°C
5
14
2
16
2.5
7
18
20
3