SP8K3 ROHM Co. Ltd., SP8K3 Datasheet - Page 3

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SP8K3

Manufacturer Part Number
SP8K3
Description
4v Drive Nch+nch Mosfet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistors
Electrical characteristic curves
10000
0.001
1000
0.01
100
100
0.1
10
10
10000
0.01
1
Fig.4 Typical Transfer Characteristics
1000
0.0
100
Fig.1 Typical Capacitance
10
1
0.1
DRAIN-SOURCE VOLTAGE : V
GATE-SOURCE VOLTAGE : V
0.5
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Fig.7 Static Drain-Source
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
vs. Drain-Source Voltage
0.1
1.0
DRAIN CURRENT : I
On-State Resistance
vs. Drain Current (Ι)
1.5
2.0
1
1
2.5
10
3.0
Ta=25°C
f=1MHz
V
V
Pulsed
GS
D
DS
V
Pulsed
GS
DS
(A)
=0V
=10V
3.5
GS
C
C
C
(V)
(V)
=10V
oss
iss
rss
100
4.0
10
10000
1000
10000
100
1000
300
250
200
150
100
10
100
1
0.01
50
10
0
Fig.2 Switching Characteristics
1
0.1
0
Fig.5 Static Drain-Source
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
t
t
GATE-SOURCE VOLTAGE : V
d (off)
d (on)
Fig.8 Static Drain-Source
t
t
f
r
2
DRAIN CURRENT : I
DRAIN CURRENT : I
On-State Resistance vs.
Gate-Source Voltage
4
On-State Resistance
vs. Drain Current (ΙΙ)
0.1
I
I
D
D
=7A
=3.5A
6
8
1
10
1
D
12
D
Ta=25°C
V
V
R
Pulsed
(A)
Ta=25°C
Pulsed
V
Pulsed
DD
GS
(A)
G
GS
=10Ω
=15V
=10V
GS
=4.5V
14
(V)
10
16
10
0.01
10000
100
1000
0.1
10
100
10
10
1
9
8
7
6
5
4
3
2
1
0
0.0
1
0.1
Fig.3 Dynamic Input Characteristics
0
Ta=25°C
V
I
R
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
D
SOURCE-DRAIN VOLTAGE : V
DD
=7A
G
Fig.6 Source Current vs.
Fig.9 Static Drain-Source
=10Ω
TOTAL GATE CHARGE : Qg (nC)
=15V
2
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
DRAIN CURRENT : I
4
On-State Resistance
vs. Drain Current (ΙΙΙ)
Source-Drain Voltage
0.5
Rev.B
6
8
1
10
1.0
SP8K3
12
D
(A)
V
Pulsed
V
Pulsed
GS
SD
GS
14
=0V
=4V
(V)
3/3
1.5
16
10

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