EM6K1 ROHM Co. Ltd., EM6K1 Datasheet - Page 3

• Manufacturer Part Number: EM6K1
• Description: 2.5v Drive Nch+nch Mos Fet
• Manufacturer: ROHM Co. Ltd.

Transistor
Switching characteristics measurement circuits
Fig.13 Switching Time Test Circuit
200m
100m
0.5m
0.2m
0.1m
50m
20m
10m
5m
2m
1m
0
Fig.10 Reverse Drain Current vs.
R
Fig.7 Static Drain-Source On-State
9
8
7
6
5
4
3
2
1
0
−50
G
V
SOURCE-DRAIN VOLTAGE : V
GS
CHANNEL TEMPERATURE : Tch ( °C)
−25
=4V
Resistance vs.
Channel Temperature
V
Source-Drain Voltage (ΙΙ)
GS
I
0
0.5
D
=100mA
D.U.T.
25
0V
I
50
D
1
75
I
D
=50mA
100 125
Ta=25 °C
Pulsed
R
SD
V
V
Pulsed
L
DD
( V)
GS
V
=4V
DS
1.5
150
0.5
50
20
10
0.005
0.002
0.001
5
2
1
0.05
0.02
0.01
0.1
0.5
0.2
0.1
Fig.8 Forward Transfer Admittance
V
V
Fig.11 Typical Capacitance vs.
0.0001
GS
DS
DRAIN-SOURCE VOLTAGE : V
0.2
0.0002 0.0005 0.001 0.002
Fig.14 Switching Time Waveforms
Ta=−25 °C
vs. Drain Current
t
d(on)
0.5
125 °C
Drain-Source Voltage
DRAIN CURRENT : I
10%
25 °C
75 °C
t
50%
on
1
10%
t
r
2
0.005 0.01 0.02
Pulse Width
90%
5
10
D
Ta =25 °C
f=1MH
V
Pulsed
0.05
(A)
GS
DS
C
C
C
20
oss
0.1 0.2
=0V
rss
V
Pulsed
iss
(V)
DS
90%
Z
=3V
t
d(off)
50
0.5
t
off
t
f
200m
100m
0.5m
0.2m
0.1m
1000
50m
20m
10m
500
200
100
50%
5m
2m
1m
50
20
10
5
2
0.1
0
Fig.9 Reverse Drain Current vs.
Fig.12 Switching Characteristics
10%
90%
t
0.2
d(on)
SOURCE-DRAIN VOLTAGE : V
t
d(off)
0.5
DRAIN CURRENT : I
Source-Drain Voltage (Ι)
t
r
t
f
0.5
1
Rev.C
2
5
Ta=125 °C
10
EM6K1
1
D
−25 °C
(mA)
75 °C
25 °C
20
Ta =25 °C
V
V
R
SD
V
Pulsed
DD
GS
G
GS
50
=10Ω
(V )
=5V
=5V
=0V
3/3
1.5
100