BSS119 Infineon Technologies Corporation, BSS119 Datasheet - Page 2

• Manufacturer Part Number: BSS119
• Description: N-channel Small Signal Mosfet 20v?800v
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Drain-source on-state resistance
V
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - ambient
D
GS
DS
DS
GS
GS
GS
=50µA
=100V, V
=100V, V
=0, I
=20V, V
=4.5V, I
=10V, I
D
=250µA
D
D
DS
=0.17A
GS
GS
=0.13 A
=0
=0, T
=0, T
j
j
=25°C
=150°C
at minimal footprint
GS
= V
j
DS
= 25 °C, unless otherwise specified
Rev. 1.3
Page 2
Symbol
V
V
I
I
R
R
Symbol
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJS
min.
min.
100
1.3
-
-
-
-
-
-
Values
Values
0.05
typ.
typ.
1.8
0.5
4.9
3.4
10
-
-
max.
max.
100
350
2.3
0.1
10
2006-12-01
5
6
-
BSS119
Unit
V
µA
nA
Unit
K/W