NSF03A60 Nihon Inter Electronics (NIEC), NSF03A60 Datasheet

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NSF03A60

Manufacturer Part Number

NSF03A60

Description

Fast Recovery Diodes

Manufacturer

Nihon Inter Electronics (NIEC)

Datasheet

1.NSF03A60.pdf (1 pages)

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Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

NSF03A60

Manufacturer:

VISHAY

Quantity:

12 500

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

NSF03A60-TE16L

Manufacturer:

HRS

Quantity:

2 429

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

NSF03A60-TE16L3

Quantity:

2 150

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3A Avg.

■最大定格 Maximum Ratings

■電気的・熱的特性 Electrical/ Thermal Characteristics

■定格・特性曲線

くり返しピーク逆電圧

Repetitive Peak Reverse Voltage

平均整流電流

Average

Rectified

Forward Current

実

R.M.S. Forward Current

サ

Surge Forward Current

動

Operating Junction Temperature Range

保

Storage Temperature Range

ピ

Peak Reverse Current

ピ

Peak Forward Voltage

逆

Reverse Recovery Time

熱

Thermal Resistance

＊Soldering Lands = 2 × 3.5 mm Both Sides

CONDUCTION ANGLE

0

作

°

0.5

0.2

θ

ー

存

ー

ー

50

20

10

5

4

3

2

1

0

5

2

1

180

効

回

0

0

接

°

D.C.

RECT 180 °

HALF SINE WAVE

RECT 120 °

RECT 60 °

ジ

温

ク

ク

Item

合

I

e t

0.5

順

復

抵

25

m

温

AVERAGE FORWARD CURRENT VS. LEAD TEMPERATURE

Alumina

Substrate mounted

順

度

逆

順

1.0

度

INSTANTANEOUS FORWARD VOLTAGE (V)

FORWARD CURRENT VS. VOLTAGE

電

時

50

−

電

範

電

電

範

LEAD TEMPERATURE (

1.5

FIG.1

FIG.4

＊

流

流

囲

囲

流

圧

間

抗

75

2.0

Tj=150

Symbol

Symbol

Tj=25

I

R

°

R

C)

V

F(RMS)

I

V

T

6

°

I

°

T

t r r

th(j-a)

C

th(j-l)

C

FSM

100

I

RRM

RM

FM

stg

O

jw

0

2.5

0

125

3.0

商用周波数，正弦波180度通電

Half Sine Wave, Resistive Load

NSF03A60

NSF03A60

Volts

150

3.5

接合部･リード間

Junction to Ambient

接合部･周囲間

45

Junction to Lead

CONDUCTION ANGLE

0

°

I

50

40

30

20

10

θ

FM

50Hz正弦半波，１サイクル，非くり返し

0

50Hz Half Sine Wave,1cycle, Non-repetitive

7

6

5

4

3

2

1

0

0.02

180

0

°

＝3A, -di/dt＝50 A/μs, T

0.02s

−40∼＋150

−40∼＋150

Conditions

T

0.05

j

T

1

＝25℃, V

FRED

j

f=50Hz,Half Sine Wave,Non-Repetitive,No Load

＝25℃, I

4.71

AVERAGE FORWARD POWER DISSIPATION

600

C

RECT 60

AVERAGE FORWARD CURRENT (A)

o

0.1

I FSM

SURGE CURRENT RATINGS

°

Ta＝27℃

Tl＝79℃

n

58

2

d

HALF SINE WAVE

RECT 120

FIG.2

FIG.5

t i

TIME (s)

RM

0.2

o i

FM

°

n

＝V

RECT 180

＝3A

s

3

Alumina Substrate

°

RRM

0.5

j

＝25℃

4

1

−

1.1

3

NSF03A60

NSF03A60

D.C.

2

5

Unit

＊

℃

℃

CONDUCTION ANGLE

V

A

A

A

A

0

°

1.6

1.2

0.8

0.4

θ

0

180

0

°

D.C.

RECT 180 °

RECT 120 °

RECT 60 °

■OUTLINE DRAWING(mm)

■APPROX. NET WEIGHT:0.16 g

Min.

−

−

−

−

−

25

AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE

HALF SINE WAVE

Alumina Substrate Mounted (Soldering Land=2×3.5mm)

50

Typ.

AMBIENT TEMPERATURE (

N

−

−

−

−

−

FIG.3

S

75

F

Max.

1.7

20

35

89

13

°

C)

0

100

3

A

℃/W

℃/W

Unit

μA

125

ns

V

6

NSF03A60

0

150

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