MAU2728 Panasonic Corporation of North America, MAU2728 Datasheet

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MAU2728

Manufacturer Part Number
MAU2728
Description
Schottky Barrier Diodes Sbd
Manufacturer
Panasonic Corporation of North America
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MAU27280G1CS
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Schottky Barrier Diodes (SBD)
MAU2728
Silicon epitaxial planar type
For rectification
 Features
 Absolute Maximum Ratings T
 Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: September 2006
 Optimum for high-density mounting
 Low forward voltage V
 Extremely low reverse current I
Reverse voltage
Maximum peak reverse voltage
Forward current (Average)
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
Detection efficiency
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
3. Absolute frequency of input and output is 2 GHz
4. * : t
of current from the operating equipment.
rr
measurement circuit
Parameter
Parameter
*
F
, good wave detection efficiency η
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Bias Application Unit (N-50BU)
R
a
= 25°C±3°C
a
A
= 25°C
Symbol
This product complies with RoHS Directive (EU 2002/95/EC).
Symbol
V
I
T
V
FSM
T
I
V
V
RM
stg
F
I
C
R
t
η
j
Wave Form Analyzer
(SAS-8130)
R
R
rr
F1
F2
t
i
= 50 Ω
–55 to +125
Rating
I
I
V
V
I
R
V
R
F
F
F
150
125
L
L
R
R
IN
30
30
30
= 1 mA
= 30 mA
= I
= 100 Ω
= 3.9 kΩ, C
= 30 V
= 1 V, f = 1 MHz
= 3 V(peak), f = 30 MHz,
R
SKH00156AED
= 10 mA, I
Unit
Conditions
mA
mA
L
°C
°C
V
V
= 10 pF
V
rr
R
= 1 mA,
t
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 0.35 ns
= 2 µs
t
p
Marking Symbol: 1A
1: Anode
2: Cathode
t
0.60
I
±0.05
F
1
2
0.2
I
R
Min
Output Pulse
F
L
= I
+0.05
–0.02
= 100 Ω
R
= 10 mA
t
I
rr
rr
= 1 mA
Typ
1.5
1.0
65
t
USSMini2-F1 Package
0.13
Max
300
0.4
1.0
+0.05
–0.02
Unit: mm
Unit
nA
pF
ns
%
V
V
1

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MAU2728 Summary of contents

Page 1

... Schottky Barrier Diodes (SBD) MAU2728 Silicon epitaxial planar type For rectification  Features  Optimum for high-density mounting  Low forward voltage V , good wave detection efficiency η F  Extremely low reverse current I R  Absolute Maximum Ratings T = 25°C a Parameter ...

Page 2

... Reverse voltage V (V) R MAU2728_  200 Reverse voltage V (V) R SKH00156AED MAU2728_  1.6 1 − 120 160 Ambient temperature T (°C) a MAU2728_ F(surge) ...

Page 3

Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...

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