SBS808M Sanyo Semiconductor Corporation, SBS808M Datasheet

SBS808M

Manufacturer Part Number

SBS808M

Description

Schottky Barrier Diode

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.SBS808M.pdf (3 pages)

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Ordering number : ENN8350

SBS808M

Applications

Features

Specifications

Absolute Maximum Ratings at Ta=25 C (Value per element)

Electrical Characteristics at Ta=25 C (Value per element)

Marking : SD

Repetitive Peak Reverse Voltage

Nonrepetitive Peak Reverse Surge Voltage

Average Output Current

Surge Forward Current

Junction Temperature

Storage Temperature

Reverse Voltage

Forward Voltage

Reverse Current

Interterminal Capacitance

Reverse Recovery Time

Thermal Resistance

•

High frequency rectification (switching regulators, converters, choppers).

Low forward voltage (I F =0.5A, V F max=0.35V) (I F =1A, V F max=0.43V).

Composite type with 2 low V F SBDs in one package, facilitating high-density mounting.

Ultrasmall package permitting applied sets to be small and slim.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

Symbol

Rth(j-a)

V RRM

V RSM

I FSM

Tstg

V F 1

V F 2

V R

I O

I R

Schottky Barrier Diode

15V, 1A Rectifier

t rr

50Hz sine wave, 1 cycle

I R =0.5mA

I F =0.5A

I F =1A

V R =6V

V R =10V, f=1MHz

I F =I R =100mA, See specified Test Circuit.

Mounted on a ceramic board (600mm

SBS808M

Conditions

0.8mm)

62005SB MS IM TB-00001442

min

Ratings

typ

Ratings

0.32

0.39

138

--55 to +125

max

0.35

0.43

No.8350-1/3

C / W

Unit

Related parts for SBS808M

SBS808M Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN SBS808M Schottky Barrier Diode 15V, 1A Rectifier Symbol Conditions ...

Page 2

... Forward Voltage (AV 0.7 (1)Rectangular wave =60 (2)Rectangular wave =120 0.6 (3)Rectangular wave =180 (4)Sine wave =180 0.5 0.4 0.3 0.2 Sine wave 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Average Output Current SBS808M 1 : Anode Contact 3 : Anode 4 : Cathode 5 : Cathode 3 SANYO : MCPH5 t rr 100000 10000 1000 100 10 1.0 0.1 0.01 0.4 0.5 IT07150 100 (2) (4)(3) ( ...

Page 3

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. SBS808M 20ms t 7 1.0 2 ...

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