SBS007M Sanyo Semiconductor Corporation, SBS007M Datasheet

SBS007M

Manufacturer Part Number

SBS007M

Description

Schottky Barrier Diode

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.SBS007M.pdf (3 pages)

Current page: 1 of 3
Download datasheet (23Kb)

Ordering number : ENN6908

Applications

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : SB

Repetitive Peak Reverse Voltage

Nonrepetitive Peak Reverse Surge Voltage

Average Output Current

Surge Forward Current

Junction Temperature

Storage Temperature

Reverse Voltage

Forward Voltage

Reverse Current

Interterminal Capacitance

Reverse Recovery Time

Thermal Resistance

•

High frequency rectification (switching regulators,

converters, choppers).

Low forward voltage (I F =0.3A, V F max=0.4V)

(I F =0.5A, V F max=0.45V).

Ultrasmall-sized package permitting applied sets to

be made small and slim (mounting height 0.85mm).

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

Symbol

Rth(j-a)

V RRM

V RSM

I FSM

Tstg

V F 1

V F 2

V R

I O

I R

t rr

50Hz sine wave, 1 cycle

I R =0.5mA

I F =0.3A

I F =0.5A

V R =6V

V R =10V, f=1MHz

I F =I R =100mA, See specified Test Circuit.

Mounted on a ceramic board (600mm

SBS007M

Conditions

Package Dimensions

unit : mm

1305

Conditions

0.3

0.65

2.0

0.8mm)

[SBS007M]

min

15V, 1A Rectifier

Schottky Barrier Diode

0.15

Ratings

typ

1 : Anode

2 : No Contact

3 : Cathode

SANYO : MCPH3

0.35

0.40

Ratings

138

SBS007M

12501 GI IM

--55 to +125

max

0.40

0.45

200

0.5

No.6908-1/3

C / W

Unit

Related parts for SBS007M

SBS007M Summary of contents

Page 1

... I F =0. =0. = =10V, f=1MHz =100mA, See specified Test Circuit. Rth(j-a) Mounted on a ceramic board (600mm Schottky Barrier Diode SBS007M 15V, 1A Rectifier [SBS007M Anode Contact 3 : Cathode SANYO : MCPH3 Ratings 15 15 0.5 10 --55 to +125 ...

Page 2

... Rectangular wave 0.2 360 0.15 0.1 Sine wave 0. 0.1 0.2 0.3 0.4 Average Forward Current Current waveform 50Hz sine wave 0. 0.1 2 Time SBS007M t rr 100 0.001 0.4 0.5 IT02953 ...

Page 3

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2001. Specifications and information herein are subject to change without notice. SBS007M PS No.6908-3/3 ...

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