Ordering number : ENA1055
SBE807
Applications
Features
Specifications
Absolute Maximum Ratings at Ta=25°C
Electrical Characteristics at Ta=25°C
Marking : SJ
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
•
•
•
High frequency rectification (switching regulators, converters, and choppers).
Low switching noise.
Low reverse current (V R =16V, I R max=15μA).
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer ' s products or
equipment.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Schottky Barrier Diode
30V, 1.0A Rectifier
Symbol
Symbol
Rth(j-a)
V RRM
V RSM
I FSM
Tstg
V F 1
V F 2
V R
I O
I R
Tj
t rr
C
SANYO Semiconductors
I R =0.2mA
I F =0.7A
I F =1.0A
V R =16V
V R =10V, f=1MHz
I F =I R =100mA, See specified Test Circuit.
When mounted on ceramic substrate (900mm
50Hz sine wave, 1 cycle
SBE807
Conditions
Conditions
2
✕0.8mm)
DATA SHEET
22708SB TI IM TC-00001249
min
30
Ratings
typ
Ratings
0.45
0.48
111
27
--55 to +125
--55 to +125
max
0.50
0.53
1.0
30
35
10
15
No. A1055-1/3
10
°C / W
Unit
Unit
μA
°C
°C
pF
ns
V
V
A
A
V
V
V