SBE813 Sanyo Semiconductor Corporation, SBE813 Datasheet

SBE813

Manufacturer Part Number

SBE813

Description

30v, 3.0a Rectifier

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.SBE813.pdf (3 pages)

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Ordering number : EN8967

SBE813

Applications

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : SE

Repetitive Peak Reverse Voltage

Nonrepetitive Peak Reverse Surge Voltage

Average Output Current

Surge Forward Current

Junction Temperature

Storage Temperature

Reverse Voltage

Forward Voltage

Reverse Current

Interterminal Capacitance

Reverse Recovery Time

Thermal Resistance

•

High frequency rectification (switching regulators, converters, choppers).

Small switching noise.

Low leakage current and high reliability due to highly reliable planar structure.

Ultrasmall package permitting applied sets to be small and slim.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Low I R Schottky Barrier Diode

30V, 3.0A Rectifier

Symbol

Rth(j-a)

V RRM

V RSM

I FSM

Tstg

V F 1

V F 2

V R

I O

I R

t rr

SANYO Semiconductors

I R =0.5mA

I F =2.0A

I F =3.0A

V R =15V

V R =10V, f=1MHz

I F =I R =100mA, See specified Test Circuit.

Mounted on a ceramic board (1200mm

50Hz sine wave, 1 cycle

SBE813

Conditions

0.8mm)

72606 / 32406SB MS IM TB-00002132

DATA SHEET

min

Ratings

typ

0.435

Ratings

0.47

--55 to +125

max

0.485

0.52

3.0

No.8967-1/3

C / W

Unit

Related parts for SBE813

SBE813 Summary of contents

Page 1

... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN SBE813 SANYO Semiconductors Low I R Schottky Barrier Diode 30V, 3.0A Rectifier ...

Page 2

... Rectangular wave 1.8 1.6 360 1.4 Sine wave 1.2 180 1.0 360 0.8 0.6 (1)Rectangular wav e =60 0.4 (2)Rectangular wav e =120 (3)Rectangular wav e =180 0.2 (4)Sine wav e =180 0 0 0.5 1.0 1.5 2.0 Average Output Current SBE813 Electrical Connection 10000 1000 100 10 1.0 0.1 0.01 0.001 0.5 0.6 0.7 0 IT09868 4.00E--04 (1) (2) (4) (3) 3.50E--04 3.00E--04 2.50E--04 2.00E--04 1.50E--04 1.00E--04 5 ...

Page 3

... SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2006. Specifications and information herein are subject to change without notice. SBE813 ...

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