SBE808 Sanyo Semiconductor Corporation, SBE808 Datasheet

SBE808

Manufacturer Part Number

SBE808

Description

Schottky Barrier Diode 15v, 1a Rectifier

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.SBE808.pdf (3 pages)

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Ordering number : ENA0451

SBE808

Applications

Features

Specifications

Absolute Maximum Ratings at Ta=25 C (Value per element)

Electrical Characteristics at Ta=25 C (Value per element)

Marking : SE

Repetitive Peak Reverse Voltage

Nonrepetitive Peak Reverse Surge Voltage

Average Output Current

Surge Forward Current

Junction Temperature

Storage Temperature

Reverse Voltage

Forward Voltage

Reverse Current

Interterminal Capacitance

Reverse Recovery Time

Thermal Resistance

•

High frequency rectification (switching regulators, converters, choppers).

Small switching noise.

Low leakage current and high reliability due to planar structure.

Ultrasmall package permitting applied sets to be small and slim.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Schottky Barrier Diode

15V, 1A Rectifier

Symbol

Rth(j-a)

V RRM

V RSM

I FSM

Tstg

V F 1

V F 2

V R

I O

I R

t rr

SANYO Semiconductors

50Hz sine wave, 1 cycle

I R =0.1mA

I F =0.5A

I F =1A

V R =6V

V R =10V, f=1MHz

I F =I R =100mA, See specified Test Circuit.

Mounted on a ceramic board (600mm

SBE808

Conditions

0.8mm)

DATA SHEET

N0106SB SY IM TC-00000264

min

Ratings

typ

Ratings

0.43

0.49

185

--55 to +150

max

0.48

0.54

3.0

No. A0451-1/3

C / W

Unit

Related parts for SBE808

SBE808 Summary of contents

Page 1

... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN SBE808 SANYO Semiconductors Schottky Barrier Diode 15V, 1A Rectifier ...

Page 2

... Forward Voltage (AV 0.7 (1)Rectangular wave =60 (2)Rectangular wave =120 0.6 (3)Rectangular wave =180 (4)Sine wave =180 0.5 0.4 0.3 0.2 Sine wave 0 0.2 0.4 0.6 Average Output Current SBE808 t rr 10000 1000 100 10 1.0 0.1 0.01 0.001 0.0001 0.5 0.6 0.7 0 IT11243 1.2E--05 (1) (2) (4) (3) 1.0E--05 8.0E--06 6.0E--06 Rectangular wave 4.0E--06 360 2.0E--06 180 360 ...

Page 3

... SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice. SBE808 12 f=1MHz 10 8 ...

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