SBE602 Sanyo Semiconductor Corporation, SBE602 Datasheet

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SBE602

Manufacturer Part Number
SBE602
Description
30v, 70ma Rectifier
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Ordering number : EN8965
SBE602
Applications
Features
Absolute Maximum Ratings at Ta=25 C (Value per element)
Electrical Characteristics at Ta=25 C (Value per element)
Marking : SQ
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Therrmal Resistance
High frequency rectification (switching regulators, converters, choppers).
Low forward voltage (V F max=0.55V).
Fast reverse recovery time (t rr max=10ns).
Low switching noise.
Low leakage current and high reliability due to highly reliable planar structure.
Ultrasmall-sized package permitting SBE602-applied sets to be made small and slim.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Schottky Barrier Diode (Twin Type
30V, 70mA Rectifier
Symbol
Symbol
Rth(j-a)
V RRM
V RSM
I FSM
Tstg
I R 1
I R 2
V R
V F
I O
Tj
t rr
C
SANYO Semiconductors
50Hz sine wave, 1 cycle
I R =20 A
I F =70mA
V R =2V
V R =15V
V R =10V, f=1MHz
I F =I R =10mA, See specified Test Circuit.
Mounted in Cu-foiled area of 0.72mm
on glass epoxy board
SBE602
Conditions
Conditions
2
Cathode Common)
0.03mm
DATA SHEET
O1806SB SY IM TC-00000234
min
30
Ratings
typ
Ratings
300
5.5
--55 to +125
--55 to +125
max
0.55
5.0
30
35
70
75
10
2
No.8965-1/3
C / W
Unit
Unit
mA
nA
pF
ns
V
V
A
V
V
C
C
A

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SBE602 Summary of contents

Page 1

... Low switching noise. • Low leakage current and high reliability due to highly reliable planar structure. • Ultrasmall-sized package permitting SBE602-applied sets to be made small and slim. • Absolute Maximum Ratings at Ta=25 C (Value per element) Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage ...

Page 2

... Rectangular wave 0.045 0.040 360 0.035 Sine wave 0.030 180 0.025 360 0.020 0.015 (1)Rectangular wav e =60 0.010 (2)Rectangular wav e =120 (3)Rectangular wav e =180 0.005 (4)Sine wav e =180 0 0 0.01 0.02 0.03 0.04 Average Output Current SBE602 t rr 1000 100 10 1.0 0.1 0.01 0.5 0.6 0.7 IT11425 4.0E--06 (1) (2) (4) (3) 3.5E--06 3.0E--06 2.5E--06 2.0E--06 1.5E--06 1.0E--06 5.0E--07 0.0E+00 0.05 0.06 ...

Page 3

... SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2006. Specifications and information herein are subject to change without notice. SBE602 2.8 f=1MHz 2.4 2.0 1 ...

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