TPC8126 TOSHIBA Semiconductor CORPORATION, TPC8126 Datasheet - Page 4

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TPC8126

Manufacturer Part Number
TPC8126
Description
Toshiba Field Effect Transistor Silicon P Channel Mos Type U-mos?
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TPC8126
Manufacturer:
TOSHIBA
Quantity:
30 000
Part Number:
TPC8126-H
Manufacturer:
TOSHIBA/东芝
Quantity:
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−10
100
−40
−32
−24
−16
−8
−6
−4
−2
−8
10
0
−0.1
0
1
−10
0
0
−4.5
Common source
Ta = 25°C
Pulse test
Common source
V DS = −10 V
Pulse test
−3.8
Drain−source voltage V
Gate−source voltage V
−0.2
−3.2
−3
−1
Drain current I
−2.8
Ta = 100°C
−1
25
R
−0.4
DS (ON)
I
I
V GS = −4.5 V
D
D
– V
– V
−2
−10
−2.6
DS
GS
−55
−0.6
– I
D
D
−10
−2.5
GS
(A)
DS
Common source
Ta = 25°C
Pulse test
−3
V GS = −2.1 V
−0.8
(V)
(V)
−2.2
−2.3
−2.4
−100
−1
−4
4
−0.4
−0.3
−0.2
−0.1
−40
−32
−24
−16
−8
0
0
0
0
−10
−2.8
−6
Drain-source voltage V
Gate−source voltage V
−0.4
−4.5
−4
−4
−5.5
−3.6
−0.8
V
−8
I
DS
D
– V
−3.2
– V
I D = −11 A
DS
GS
−1.2
−12
−3
GS
DS
−3
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
V GS = −2.2 V
−1.6
−16
(V)
(V)
2009-11-19
TPC8126
−2.6
−2.8
−2.4
−2.3
−2.5
−20
−2

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