TPC8061-H TOSHIBA Semiconductor CORPORATION, TPC8061-H Datasheet - Page 4

• Manufacturer Part Number: TPC8061-H
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos?-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
0.1
10
15
10
10
8
6
4
2
0
5
0
1
0.1
0
0
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
10
Drain-source voltage V
8
Gate-source voltage V
0.2
6
1
5
Drain current I
4.5
4
Ta = −55°C
1
0.4
2
⎪Y
I
I
D
D
3.1
fs
– V
– V
100
100
⎪ – I
DS
GS
0.6
D
3
D
25
3
10
Ta = −55°C
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
25
V GS = 2.4 V
0.8
(V)
(V)
4
2.9
2.8
2.7
2.6
100
1
5
4
100
0.4
0.3
0.2
0.1
20
16
12
10
8
4
0
1
0
0.1
0
0
Common source
Ta = 25 ℃
Pulse test
Drain-source voltage V
Gate-source voltage V
8
0.4
6
2
5
Drain current I
4.5
4
1
2
R
0.8
V
DS (ON)
4
I
DS
D
– V
4
V GS = 10 V
– V
DS
4.5
GS
– I
I D = 8 A
1.2
6
D
3.3
D
10
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25℃
Pulse test
TPC8061-H
V GS = 2.4 V
1.6
(V)
(V)
8
2009-11-18
3.1
2.9
2.7
100
10
2