SI1013R Vishay, SI1013R Datasheet - Page 3

• Manufacturer Part Number: SI1013R
• Description: P-channel 1.8-v G-s Mosfet
• Manufacturer: Vishay

Document Number: 71167
S-02464—Rev. A, 25-Oct-00
1000
4.0
3.2
2.4
1.6
0.8
0.0
100
10
5
4
3
2
1
0
1
0
0.0
0.0
V
I
D
0.2
DS
Source-Drain Diode Forward Voltage
0.2
= 250 mA
On-Resistance vs. Drain Current
200
= 10 V
T
J
V
= 25_C
0.4
SD
Q
V
0.4
g
T
GS
I
– Source-to-Drain Voltage (V)
D
J
– Total Gate Charge (nC)
V
= 125_C
= 1.8 V
– Drain Current (mA)
GS
400
0.6
Gate Charge
0.6
= 2.5 V
0.8
0.8
600
T
1.0
J
V
= –55_C
GS
1.0
1.2
= 4.5 V
800
1.2
1.4
1000
1.6
_
1.4
New Product
120
100
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
5
4
3
2
1
0
0
–50
0
0
I
On-Resistance vs. Gate-to-Source Voltage
D
C
On-Resistance vs. Junction Temperature
= 200 mA
rss
–25
1
4
T
V
V
C
J
DS
GS
oss
– Junction Temperature (_C)
0
C
– Gate-to-Source Voltage (V)
iss
– Drain-to-Source Voltage (V)
2
Capacitance
8
25
Vishay Siliconix
I
3
V
I
D
D
GS
= 350 mA
= 350 mA
50
= 4.5 V
12
Si1013R/X
4
75
V
I
D
GS
= 150 mA
16
www.vishay.com
= 1.8 V
5
100
125
20
6
3