SI4431BDY Vishay, SI4431BDY Datasheet - Page 3

• Manufacturer Part Number: SI4431BDY
• Description: P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72092
S-70315-Rev. B, 12-Feb-07
0.08
0.06
0.04
0.02
0.00
30
10
10
1
8
6
4
2
0
0.0
0
0
V
I
V
D
Source-Drain Diode Forward Voltage
DS
0.2
GS
= 7.5 A
On-Resistance vs. Drain Current
5
= 15 V
= 4.5 V
V
5
SD
Q
0.4
g
- Source-to-Drain Voltage (V)
I
10
D
- Total Gate Charge (nC)
T
Gate Charge
- Drain Current (A)
J
10
= 150 °C
0.6
15
0.8
15
20
V
1.0
T
GS
J
= 25 °C
= 10 V
20
25
1.2
1.4
30
25
1600
1400
1200
1000
0.10
0.08
0.06
0.04
0.02
0.00
1.6
1.4
1.2
1.0
0.8
0.6
800
600
400
200
- 50
0
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
C
GS
= 7.5 A
rss
I
D
= 10 V
= 2 A
2
6
T
0
J
V
V
- Junction Temperature (°C)
GS
DS
C
oss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
12
4
50
I
C
Vishay Siliconix
D
iss
= 7.5 A
Si4431BDY
18
75
6
100
www.vishay.com
24
8
125
150
10
30
3