SI2301DS Vishay, SI2301DS Datasheet - Page 4

• Manufacturer Part Number: SI2301DS
• Description: P-channel 1.25-w, 2.5-v Mosfet
• Manufacturer: Vishay

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4
Si2301DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
- 0.1
- 0.2
10
0.4
0.3
0.2
0.1
0.0
1
0.01
0.1
0.2
- 50
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Source-Drain Diode Forward Voltage
0.4
T
V
J
SD
= 150_C
0
0.6
- Source-to-Drain Voltage (V)
T
Threshold Voltage
J
- Temperature (_C)
0.8
10
-3
50
Single Pulse
1.0
I
Normalized Thermal Transient Impedance, Junction-to-Ambient
D
T
= 250 mA
J
= 25_C
1.2
100
1.4
10
-2
Square Wave Pulse Duration (sec)
150
1.6
10
-1
14
12
10
0.6
0.5
0.4
0.3
0.2
0.1
0.0
8
6
4
2
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
V
1
GS
2
- Gate-to-Source Voltage (V)
0.10
Single Pulse Power
Single Pulse
T
C
= 25_C
Time (sec)
4
I
D
S-31990—Rev. E, 13-Oct-03
= 2.8 A
10
Document Number: 70627
1.00
6
30
10.00
8