L2N7002SLT1G Leshan Radio Company, L2N7002SLT1G Datasheet - Page 2

• Manufacturer Part Number: L2N7002SLT1G
• Description: N?cchannel Sot?c23 Small Signal Mosfet 115 Mamps, 60 Volts L2n7002slt1g
• Manufacturer: Leshan Radio Company

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
BODY–DRAIN DIODE RATINGS
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage Current, Forward
Gate–Body Leakage Current, Reverse
Gate Threshold Voltage
On–State Drain Current
Static Drain–Source On–State Voltage
Static Drain–Source On–State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–Off Delay Time
Diode Forward On–Voltage
Source Current Continuous
Source Current Pulsed
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(I
(Body Diode)
S
GS
GS
GS
GS
DS
DS
GS
GS
GS
GS
DS
DS
DS
DS
= 115 mAdc, V
= 0, V
= 20 Vdc)
= –20 Vdc)
= V
≥ 2.0 V
= 10 Vdc, I
= 5.0 Vdc, I
= 10 V, I
= 5.0 Vdc, I
≥ 2.0 V
= 25 Vdc, V
= 25 Vdc, V
= 25 Vdc, V
= 0, I
GS
D
, I
DS
DS(on)
DS(on)
= 10 µAdc)
D
D
= 60 Vdc)
= 250 µAdc)
= 500 mAdc)
D
D
D
GS
GS
GS
, V
, I
= 500 mAdc)
GS
= 50 mAdc)
= 50 mAdc) T
D
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
GS
= 200 mAdc)
= 0 V)
= 10 Vdc)
(Note 2.)
Characteristic
(V
(V
R
G
DD
T
= 25 Ω, R
C
C
= 25 Vdc , I
= 25°C
= 25°C
(Note 2.)
(T A = 25°C unless otherwise noted)
L
= 50 Ω, V
D
^ 500 mAdc,
T
J
T
= 125°C
J
gen
= 25°C
= 10 V)
V
LESHAN RADIO COMPANY, LTD.
V
Symbol
V
(BR)DSS
r
I
I
I
DS(on)
GSSR
t
t
GSSF
DS(on)
I
GS(th)
C
D(on)
C
d(on)
d(off)
V
C
DSS
g
I
SM
oss
I
FS
SD
rss
iss
S
Min
500
1.0
60
80
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ
1.8
1.5
1.5
2.5
–
–
–
–
–
–
–
–
–
17
10
–
–
–
11
7
L2N7002SLT1G
0.375
–800
–100
–115
Max
3.75
–1.5
500
100
1.0
2.0
2.0
2.5
5.0
50
25
20
40
–
–
–
mmhos
Ohms
mAdc
mAdc
µAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
mA
pF
pF
pF
ns
ns
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